Et3GeN(SiMe3)2 and Et3SnN(SiMe3)2: New precursors for chemical vapor deposition processes

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• 作者：S. V. Sysoev (187)
  L. D. Nikulina (187)
  E. N. Ermakova (187)
  M. L. Kosinova (187)
  V. I. Rakhlin (287)
  I. P. Tsyrendorzhieva (287)
  A. V. Lis (287)
  M. G. Voronkov (287)
  
• 刊名：Inorganic Materials
• 出版年：2013
• 出版时间：April 2013
• 年：2013
• 卷：49
• 期：4
• 页码：363-367
• 全文大小：207KB
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  7. Rakhlin, V.I., Nikulina, L.D., Sysoev, S.V., et al., / N-Bromohexamethyldisilazane: Investigation of Properties and Thermodynamic Simulation of Precipitation of Thin-Layer Structures from the Vapor Phase, / Glass Phys. Chem., 2011, vol. 37, no. 1, pp. 60鈥?4. CrossRef
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• 作者单位：S. V. Sysoev (187)
  L. D. Nikulina (187)
  E. N. Ermakova (187)
  M. L. Kosinova (187)
  V. I. Rakhlin (287)
  I. P. Tsyrendorzhieva (287)
  A. V. Lis (287)
  M. G. Voronkov (287)
  
  187. Nikolaev Institute of Inorganic Chemistry, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent鈥檈va 3, Novosibirsk, 630090, Russia
  287. Favorskii Institute of Chemistry, Siberian Branch, Russian Academy of Sciences, ul. Favorskogo 1, Irkutsk, 664033, Russia
  
• ISSN：1608-3172

文摘

We have synthesized the germanium- and tin-containing organosilicon compounds Et3GeN(SiMe3)2 and Et3SnN(SiMe3)2 as new precursors for the preparation of materials by chemical vapor deposition. The compounds were characterized by NMR, IR and UV spectroscopies and thermal analysis. Using vapor pressure measurements, we obtained temperature dependences of their saturated vapor pressure. We assessed their thermal stability and calculated the thermodynamic characteristics of vaporization of the organosilicon compounds.