Bandgap engineered graphene and hexagonal boron nitride for resonant tunnelling diode

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• 作者：PENCHALAIAH PALLA ; GOPI RAJA UPPU ; ANITA S ETHIRAJ…
• 关键词：Device simulation ; graphene ; h ; BN ; NEGF ; RTD.
• 刊名：Bulletin of Materials Science
• 出版年：2016
• 出版时间：October 2016
• 年：2016
• 卷：39
• 期：6
• 页码：1441-1451
• 全文大小：2,123 KB
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Chemistry
  Materials Science
  Engineering, general
  
• 出版者：Springer India
• ISSN：0973-7669
• 卷排序：39

文摘

In this article a double-barrier resonant tunnelling diode (DBRTD) has been modelled by taking advantage of single-layer hexagonal lattice of graphene and hexagonal boron nitride (h-BN). The DBRTD performance and operation are explored by means of a self-consistent solution inside the non-equilibrium Green’s function formalism on an effective mass-Hamiltonian. Both p- and n-type DBRTDs exhibit a negative differential resistance effect, which entails the resonant tunnelling through the hole and electron bound states in the graphene quantum well, respectively. The peak-to-valley ratio of approximately 8 (3) for p-type (n-type) DBRTD with quantum well of 5.1 nm (4.3 nm) at a barrier width of 1.3 nm was achieved for zero bandgap graphene at room temperature.