L, C and X band integrated synthetic aperture radar (SAR) receiver

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• 作者：Faizah Abu Bakar (1) (4)
  Jan Holmberg (2)
  Tero Nieminen (1)
  Qaiser Nehal (1)
  Pekka Ukkonen (1)
  Ville Saari (1)
  Kari Halonen (1)
  Markku Aberg (2)
  Iiro Sundberg (3)
  
• 关键词：Integrated receiver ; RF front ends ; Analog baseband chain ; Analog ; to ; digital converter ; Synthetic aperture radar
• 刊名：Analog Integrated Circuits and Signal Processing
• 出版年：2013
• 出版时间：December 2013
• 年：2013
• 卷：77
• 期：3
• 页码：423-436
• 全文大小：
• 作者单位：Faizah Abu Bakar (1) (4)
  Jan Holmberg (2)
  Tero Nieminen (1)
  Qaiser Nehal (1)
  Pekka Ukkonen (1)
  Ville Saari (1)
  Kari Halonen (1)
  Markku Aberg (2)
  Iiro Sundberg (3)
  
  1. Department of Micro and Nanosciences, SMARAD-2, Aalto University School of Electrical Engineering, P.O. Box 11000, 00076, Aalto, Finland
  4. School of Microelectronic Engineering, Universiti Malaysia Perlis, Pauh Putra Campus, 02600, Arau, Perlis, Malaysia
  2. VTT Technical Research Centre of Finland, P.O. Box 1000, 02044, VTT, Finland
  3. DA-Design Oy, Keskuskatu 29, 31600, Jokioinen, Finland
  
• ISSN：1573-1979

文摘

An integrated receiver consisting of RF front ends, analog baseband (BB) chain with an analog to digital converter (ADC) for a synthetic aperture radar (SAR) implemented in 130?nm CMOS technology is presented in this paper. The circuits are integrated on a single chip with a size of 10.88?mm2. The RF front end consists of three parallel signal channel intended for L, C and X-band of the SAR receiver. The BB is selectable between 50 and 160?MHz bandwidths through switches. The ADC has selectable modes of 5, 6, 7 and 8 bits via control switches. The receiver has a nominal gain of 40 and 37?dB and noise figure of 11 and 13.5?dB for 160?MHz BB filter at room temperature for L-band and C-band, respectively. The circuits, which use a 1.2?V supply voltage, dissipate maximum power of 650?mW with 50?MHz BB and 8 bit mode ADC, and maximum power of 800?mW with 160?MHz BB and 8 bit mode ADC.