Photoluminescence of Si-vacancy color centers in diamond films grown in microwave plasma in methane-hydrogen-silane mixtures

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• 作者：V. S. Sedov ; V. G. Ralchenko ; I. I. Vlasov…
• 关键词：diamond ; polycrystalline films ; doping ; silane ; photoluminescence ; color centers ; CVD method.
• 刊名：Bulletin of the Lebedev Physics Institute
• 出版年：2014
• 出版时间：December 2014
• 年：2014
• 卷：41
• 期：12
• 页码：359-363
• 全文大小：601 KB
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• 刊物类别：Physics and Astronomy
• 刊物主题：Physics
  Physics
  Russian Library of Science
  
• 出版者：Allerton Press, Inc. distributed exclusively by Springer Science+Business Media LLC
• ISSN：1934-838X

文摘

The processes of the synthesis of silicon-doped microcrystalline diamond films on AlN and Si substrates in microwave plasma in “methane-hydrogen-silane-mixtures were studied. It is shown that the dependence of the photoluminescence (PL) line intensity of silicon-vacancy centers in diamond (λ = 738 nm) on the silane concentration in a gas mixture passes through a maximum at SiH4/CH4 concentrations of 0.1% for Si substrates and 0.6% SiH4/CH4 for aluminum nitride substrates. It was found that such nonmonotonic variation of the PL intensity with increasing silane concentration occurs despite the unchanged growth rate of the diamond film, its structure, and phase composition in the studied silane concentration SiH4/CH4 range of 0-.9%.