Synthesis and doping of microcolumn diamond photoemitters with silicon-vacancy color centers

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• 作者：D. N. Sovyk (1) (2)
  V. A. Shershulin (1) (3)
  V. G. Ralchenko (1) (2)
  A. A. Khomich (1)
  M. S. Komlenok (1) (2)
  V. V. Vorobyov (4)
  I. I. Vlasov (1) (2)
  A. V. Akimov (5)
  V. G. Pereverzev (1) (2)
  V. I. Konov (1) (2)
  
  1. Prokhorov General Physics Institute ; Russian Academy of Sciences ; ul. Vavilova 38 ; Moscow ; 119991 ; Russia
  2. National Research Nuclear University 鈥淢EPhI鈥? Kashirskoe sh. 31 ; Moscow ; 115409 ; Russia
  3. National Research University of Electronic Technology (MIET) ; 4806 proezd 5 ; Zelenograd ; Moscow ; 124498 ; Russia
  4. Moscow Institute of Physics and Technology ; Institutskii per. 9 ; Dolgoprudnyi ; Moscow Oblast ; 141700 ; Russia
  5. Russian Quantum Center ; ul. Novaya 100A ; Skolkovo ; Moscow oblast ; 143025 ; Russia
  
• 关键词：diamond ; chemical vapor deposition ; doping with silicon ; silicon ; vacancy color center ; photoluminescence
• 刊名：Bulletin of the Lebedev Physics Institute
• 出版年：2015
• 出版时间：February 2015
• 年：2015
• 卷：42
• 期：2
• 页码：63-66
• 全文大小：713 KB
• 参考文献：1. Aharonovich, I, Castelletto, S, Simpson, D A (2011) Rep. Prog. Phys. 74: pp. 076501 CrossRef
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• 刊物类别：Physics and Astronomy
• 刊物主题：Physics
  Physics
  Russian Library of Science
  
• 出版者：Allerton Press, Inc. distributed exclusively by Springer Science+Business Media LLC
• ISSN：1934-838X

文摘

The method of epitaxial growth of localized photoluminescence sources in the form of the ordered microcolumn diamond structures with silicon-vacancy (SiV) color centers is implemented. The process is based on diamond deposition in microwave plasma in CH4-H2 mixtures in microwells in a silicon mask on a diamond single crystal substrate, where the Si mask itself is a silicon doping source. Strong photoluminescence of SiV centers at a wavelength of 738 nm is detected; the spatial distribution of luminescence completely coincides with the synthesized structure arrangement.