Bismuth quantum dots and strong infrared photoluminescence in migration-enhanced epitaxy grown GaAsBi-based structures

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• 作者：Renata Butkut臈 (1) <br> Karolis Sta拧ys (1) <br> Vaidas Pa膷ebutas (1) <br> Bronislovas 膶echavi膷ius (1) <br> Rokas Kondrotas (1) <br> Andrejus Gei啪utis (1) <br> Ar奴nas Krotkus (1) <br><br>1. Center for Physical Sciences and Technology ; A. Go拧tauto 11 ; Vilnius ; Lithuania <br>
• 关键词：GaAsBi ; Molecular beam epitaxy ; Migration ; enhanced epitaxy ; Rapid thermal annealing ; Photoluminescence
• 刊名：Optical and Quantum Electronics
• 出版年：2015
• 出版时间：April 2015
• 年：2015
• 卷：47
• 期：4
• 页码：873-882
• 全文大小：1,135 KB
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• 刊物主题：Optics, Optoelectronics, Plasmonics and Optical Devices; Electrical Engineering; Characterization and Evaluation of Materials; Computer Communication Networks;
• 出版者：Springer US
• ISSN：1572-817X

文摘

The strong photoluminescence (PL) signal at wavelengths ranging from 1,300 to 1,500聽nm was observed in GaAsBi epitaxial layers grown by migration-enhanced epitaxy and annealed at \(600\,^{\circ }\hbox {C}\) and higher temperatures. PL measurements at liquid helium temperatures showed two peaks at \(\sim \) 0.9 and \(\sim \) 1聽eV. It was found that intensity of the higher energy peak decreases with temperature leaving only the lower energy peak at room temperature. Structural investigations demonstrated that annealing reduces Bi content in GaAsBi lattice by precipitating bismuth in nanometer-scale clusters. It is suggested that PL can be caused by the semimetal鈥搒emiconductor transition quantum confinement due to the quantum confinement effect in Bi clusters.