Effect of doping on the polarization characteristics of spin-injected quantum dot VCSEL

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• 作者：Omar Qasaimeh (1)
  
  1. Department of Electrical Engineering ; Jordan University of Science and Technology ; P.O. Box 3030 ; Irbid ; 22110 ; Jordan
  
• 关键词：Quantum dot ; VCSEL ; Spin polarization ; Stability
• 刊名：Optical and Quantum Electronics
• 出版年：2015
• 出版时间：March 2015
• 年：2015
• 卷：47
• 期：3
• 页码：465-476
• 全文大小：424 KB
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• 刊物主题：Optics, Optoelectronics, Plasmonics and Optical Devices; Electrical Engineering; Characterization and Evaluation of Materials; Computer Communication Networks;
• 出版者：Springer US
• ISSN：1572-817X

文摘

The polarization characteristics of doped spin-injected quantum dot vertical cavity surface emitting laser (QD-VCSEL) have been studied using multi-population spin-flip coupled rate equation model. The stability conditions of spin-injected VCSEL are also investigated for different device parameters. Our analysis reveals that QD-VCSEL emitting at high lasing energies, close to the first excited state energy, demonstrates high output ellipticity and high ellipticity gain compared to QD-VCSEL emitting at the ground state energy. Also, we find that increasing the p-type doping concentration of the quantum dots increases the output ellipticity gain of the device and significantly alters the stability conditions of the VCSEL. Large instability is observed when the VCSEL is emitting near \(\sim \!\!70\hbox {meV}\) above the ground state energy and when the quantum dots are doped with \(\sim \!\!4\times 10^{10}\,\hbox {cm}^{-2}\) of p-type concentration. Moreover, we find that QD-VCSEL exhibits good stability when its emission energy is approximately 10鈥?0聽meV higher than the ground state energy and when the dots are doped with more than \(4\times 10^{10}\,\hbox {cm}^{-2}\) of p-type concentration.