Electron Mobilities and Effective Masses in InGaAs/InAlAs HEMT Structures with High In Content

详细信息    查看全文

• 作者：N. A. Yuzeeva ; A. V. Sorokoumova ; R. A. Lunin…
• 关键词：HEMT structures ; InGaAs/InAlAs ; Effective mass ; Mobility
• 刊名：Journal of Low Temperature Physics
• 出版年：2016
• 出版时间：December 2016
• 年：2016
• 卷：185
• 期：5-6
• 页码：701-706
• 全文大小：460 KB
• 刊物类别：Physics and Astronomy
• 刊物主题：Physics
  Condensed Matter
  Characterization and Evaluation Materials
  Magnetism and Magnetic Materials
  
• 出版者：Springer Netherlands
• ISSN：1573-7357
• 卷排序：185

文摘

In\(_{x}\)Ga\(_{1-{x}}\)As/In\(_{y}\)Al\(_{1-{y}}\)As HEMT structures \({\updelta }\)-doped by Si were grown by molecular beam epitaxy on InP substrate. We investigated the influence of the In content on the electron mobilities and effective masses in dimensionally quantized subbands. The electron effective masses were determined by the temperature dependence of the amplitude of the Shubnikov–de Haas effect at 1.6 and 4.2 K. We found that the more the In content in quantum well (QW), the less the electron effective masses. The mobilities are higher in HEMT structures with wider and deeper QW. The energy band diagrams were calculated by using Vegard’s law for basic parameters. The calculated band diagrams are in a good agreement with the experimental data of photoluminescence spectra.