Deposition of a Mo doped GaN thin film on glass substrate by thermionic vacuum arc (TVA)

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• 作者：Soner ?zen ; Volkan ?enay ; Suat Pat…
• 刊名：Journal of Materials Science: Materials in Electronics
• 出版年：2015
• 出版时间：July 2015
• 年：2015
• 卷：26
• 期：7
• 页码：5060-5064
• 全文大小：921 KB
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  33.W.C. Oliver, G.M. Pharr, J
• 作者单位：Soner ?zen (1)
  Volkan ?enay (1) (2)
  Suat Pat (1)
  ?adan Korkmaz (1)
  
  1. Physics Department, Eski?ehir Osmangazi University, 26480, Eski?ehir, Turkey
  2. Primary Science Education Department, Bayburt University, 69000, Bayburt, Turkey
  
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Chemistry
  Optical and Electronic Materials
  Characterization and Evaluation Materials
  
• 出版者：Springer New York
• ISSN：1573-482X

文摘

Current research presents a new deposition method for GaN thin films that produces in a very short production time for GaN-based solid-state applications. A Mo doped GaN thin film on a glass substrate was produced by thermionic vacuum arc (TVA) technique. The TVA technique is a novel non-reactive plasma technique. The optical properties were determined by Filmetrics F20 interferometer and UV–Vis double beam spectrophotometer. The surface morphology was analyzed using field emission scanning electron microscopy and atomic force microscopy. The mean thickness value was measured as 100?nm by Filmetrics interferometer. The crystalline structure of the produced thin film has a Wurtzite crystal structure (004) as obtained by X-ray diffraction. Hardness value was determined as 14?GPa with the Oliver–Pharr method. The obtained properties are consistent with the values reported in related literature. The findings indicate that the TVA method provides advantages for optical and industrial applications.