Characterization of a fast grown GaAs:Sn thin film by thermionic vacuum arc

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• 作者：Soner ?zen ; Volkan ?enay ; Suat Pat…
• 刊名：Journal of Materials Science: Materials in Electronics
• 出版年：2015
• 出版时间：November 2015
• 年：2015
• 卷：26
• 期：11
• 页码：8983-8987
• 全文大小：1,334 KB
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• 作者单位：Soner ?zen (1)
  Volkan ?enay (1) (2)
  Suat Pat (1)
  ?adan Korkmaz (1)
  
  1. Physics Department, Eski?ehir Osmangazi University, 26480, Eskisehir, Turkey
  2. Primary Science Education Department, Bayburt University, 69000, Bayburt, Turkey
  
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Chemistry
  Optical and Electronic Materials
  Characterization and Evaluation Materials
  
• 出版者：Springer New York
• ISSN：1573-482X

文摘

In this research, a tin doped gallium arsenide thin film was grown on a glass substrate by means of the TVA technique in a very short period of time (70 s) and it’s morphological, compositional, and optical properties were examined. The deposited GaAs:Sn structures were characterized via both atomic force microscope (AFM) and field emission scanning electron microscope (FESEM). In this context, current research aims to reach a conclusion about the structure of the produced GaAs:Sn film by combining AFM, FESEM and energy dispersive X-ray spectroscopy data. From the optical investigation, the refractive index and extinction coefficient values for the produced film were obtained as 3.68 and 0.03 at the wavelength of 632.8 nm, respectively. The direct optical band gap energy of the deposited thin film was determined by two different models. Estimated optical band gap values were compared with each other. The results showed that TVA technique is suitable for a GaAs:Sn coating on glass substrate.