Effect of doped boron on the properties of ZnO thin films prepared by sol-gel spin coating

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• 作者：Bin Wen (1)
  Chaoqian Liu (1)
  Weidong Fei (2) (3)
  Hualin Wang (1)
  Shimin Liu (1)
  Nan Wang (1)
  Weiping Chai (1)
  
• 关键词：Boron ; doped ZnO ; Sol ; gel ; Transparent conductive oxide
• 刊名：Chemical Research in Chinese Universities
• 出版年：2014
• 出版时间：June 2014
• 年：2014
• 卷：30
• 期：3
• 页码：509-512
• 全文大小：
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• 作者单位：Bin Wen (1)
  Chaoqian Liu (1)
  Weidong Fei (2) (3)
  Hualin Wang (1)
  Shimin Liu (1)
  Nan Wang (1)
  Weiping Chai (1)
  
  1. Engineering Research Center of Optoelectronic Materials and Devices, School of Materials Science and Engineering, Dalian Jiaotong University, Dalian, 116028, P. R. China
  2. School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150001, P. R. China
  3. School of Mechanical Engineering, Qinghai University, Xining, 810016, P. R. China
  
• ISSN：2210-3171

文摘

Transparent conductive boron-doped ZnO thin films were prepared by sol-gel spin coating method. The effect of doped boron concentration on the properties of the films was systematically discussed. The films were characterized by X-ray diffraction, atomic force microscopy, spectrophotometry, and Hall effect measurement system. All the doped and undoped ZnO films were of a single hexagonal structure, and showed a preferred orientation of (002). The particle size and surface roughness of the films decreased with increased doped boron concentration. All the films exhibited an average transmittance of approximate 90% in visible-light region and an energy gap of about 3.3 eV. The maximum carrier concentration, the highest carrier mobility and the lowest resistivity were observed at a doped boron concentration of 0.5%(molar fraction). Based on these results, we suggested that the saturation concentration of doped boron in ZnO film is 0.5%(molar fraction).