Effects of annealing ambient on ferroelectric properties and surface chemistry of sol–gel derived Bi3.25La0.75Ti3O12 thin films

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• 作者：Jia Li (1)
  Michiko Yoshitake (2)
  Weijie Song (1)
  
• 刊名：Journal of Materials Science: Materials in Electronics
• 出版年：2014
• 出版时间：January 2014
• 年：2014
• 卷：25
• 期：1
• 页码：343-348
• 全文大小：527 KB
• 作者单位：Jia Li (1)
  Michiko Yoshitake (2)
  Weijie Song (1)
  
  1. Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, People’s Republic of China
  2. National Institute for Materials Science, 3-13 Sakura, Tsukuba, Japan
  
• ISSN：1573-482X

文摘

In this work, Bi3.25La0.75Ti3O12 (BLT) thin films were prepared by sol–gel coatings followed by rapid thermal annealing in Ar or O2 ambient. The correlation among annealing ambient, ferroelectric characteristics and surface chemistry of the BLT thin films were investigated. The BLT thin film annealed in Ar showed weaker crystallization, less dense surface and smaller polarization value than that annealed in O2. After 109 cycles, the remnant polarization of the BLT film annealed in Ar decreased to 83.5?% of the initial value while it remained 89.5?% for the sample annealed in O2. X-ray photoelectron spectroscopy results indicated the inferior fatigue characteristics of the sample annealed in Ar was the comprehensive result of oxygen vacancies vicinity to Bi and Ti ion in the thin film.