Passivation and antireflection AZO:H layer in AZO:H/p-Si heterojunction solar cells
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- 作者：Qian Jiang (1)
Weiyan Wang (1)
Yuheng Zeng (1)
Wei Xu (1)
Jinhua Huang (1)
Ti Zhou (2)
Weijie Song (1) - 刊名：Journal of Materials Science: Materials in Electronics
- 出版年：2014
- 出版时间：December 2014
- 年：2014
- 卷：25
- 期：12
- 页码：5356-5361
- 全文大小：965 KB
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21. J.W. Leem, D.H. Joo, J.S. Yu, Sol. Energy Mater. Sol. Cells- 作者单位：Qian Jiang (1)
Weiyan Wang (1)
Yuheng Zeng (1)
Wei Xu (1)
Jinhua Huang (1)
Ti Zhou (2)
Weijie Song (1)
1. Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
2. Sun Earth Solar Power Co., Ltd., No. 211 Xing Guang Road, High-Tech Zone, Ningbo, 315040, China- ISSN：1573-482X
- 作者单位：Qian Jiang (1)
文摘
In this work, aluminum-doped zinc oxide (AZO)/p-Si heterojunction solar cells were prepared by sputtering of ~120?nm AZO thin films in Ar or Ar–H2 atmosphere on textured p-Si wafers, and the effects of hydrogen incorporation on the solar cell performance were investigated. Results showed that the performance of AZO/p-Si heterojunction solar cells was improved with the increase of hydrogen volume concentration from 0 to 23?%. The AZO:H/p-Si heterojunction solar cells prepared in Ar-3?% H2 exhibited a short-circuit current density of 29?mA/cm2 and a conversion efficiency of 2.84?%. The reflectance measurement indicated that the reflectance of p-Si surface in the range of 400-,100?nm decreased from 13 to 4?% after AZO:H films coating; and the capacitance–voltage measurement indicated that the density of defect states at AZO/p-Si interface was decreased after hydrogen incorporation. Passivation and antireflection functions can be realized in AZO:H films deposited in Ar–H2, which opens a novel route to prepare cost-effective AZO/p-Si heterojunction solar cells.