Structural and dielectric properties of Ba6?xNd8+2xTi18O54 (x?=?2/3) thin films processed by sol–gel technique
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- 作者：Weixin Zhu ; Yao Zhang ; Yixi Yang ; Dong Zhou…
- 刊名：Journal of Materials Science: Materials in Electronics
- 出版年：2015
- 出版时间：February 2015
- 年：2015
- 卷：26
- 期：2
- 页码：927-932
- 全文大小：943 KB
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Yao Zhang (1)
Yixi Yang (1)
Dong Zhou (1)
Chengtao Yang (1)
1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China - 刊物类别：Chemistry and Materials Science
- 刊物主题：Chemistry
Optical and Electronic Materials
Characterization and Evaluation Materials - 出版者：Springer New York
- ISSN：1573-482X
文摘
Ba6?xNd8+2xTi18O54 (x?=?2/3, BNT) thin films were obtained by the Pechini sol–gel technique on the Si and Pt/Ti/SiO2/Si substrates. The heat treatment schedule was researched by differential scanning calorimetry and thermal gravimetry. The effects of annealing temperature on crystallinity and morphological characteristic were investigated by X-ray diffraction and scanning electron microscope. The results show that a crystallized thin film with a tungsten bronze structure was obtained by annealing the films at 950?°C. With the aid of 2?wt% B2O3-SiO2 addition, the crystallization temperature decreased to 900?°C. The dielectric characteristics measurement showed that the dielectric constant and the dielectric loss of the BNT thin films were 45.2 and 0.011 at 1?MHz frequency, the leakage current density was 4.13?×?10??A/cm2 at bias of 30?V.