Characteristics and Charge Storage of Silicon Quantum Dots Embedded in Silicon Nitride Film
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- 作者：Wugang Liao ; Xiangbin Zeng ; Xixing Wen ; Wenjun Zheng…
- 关键词：Silicon nitride ; thermal annealing ; photoluminescence ; charge storage
- 刊名：Journal of Electronic Materials
- 出版年：2015
- 出版时间：March 2015
- 年：2015
- 卷：44
- 期：3
- 页码：1015-1020
- 全文大小：1,377 KB
- 参考文献：1. B.H. Kim, C.H. Cho, J.S. Mun, M.K. Kwon, T.Y. Park, J.S. Kim, C.C. Byeon, J. Lee, and S.J. Park, / Adv. Mater. 20, 3100 (2008). CrossRef
2. X.B. Zeng, W.G. Liao, G.Z. Wen, X.X. Wen, and W.J. Zheng, / J. Appl. Phys. 115, 154314 (2014). CrossRef
3. R. Guerra, F. Cigarini, and S. Ossicini, / J. Appl. Phys. 113, 143505 (2013). CrossRef
4. M. Molinari, H. Rinnert, and M. Vergnat, / J. Appl. Phys. 101, 123532 (2007). CrossRef
5. C.H. Cheng, Y.C. Lien, C.L. Wu, and G.R. Lin, / Opt. Express 21, 391 (2013). CrossRef
6. G.R. Lin, Y.C. Lien, and Y.H. Pai, / J. Electrochem. Soc. 157, H256 (2010). CrossRef
7. Y.C. Lien, Y.H. Pai, and G.R. Lin, / IEEE J. Quantum Elect. 46, 121 (2010). CrossRef
8. M. Porti, M. Avidano, M. Nafria, X. Aymerich, J. Carreras, O. Jambois, and B. Garrido, / J. Appl. Phys. 101, 064509 (2007). CrossRef
9. C.D. Lin, C.H. Cheng, Y.H. Lin, C.L. Wu, Y.H. Pai, and G.R. Lin, / Appl. Phys. Lett. 99, 243501 (2011). CrossRef
10. N.M. Park, S.H. Choi, and S.J. Park, / Appl. Phys. Lett. 81, 1092 (2002). CrossRef
11. C.H. Cho, B.H. Kim, T.W. Kim, S.J. Park, N.M. Park, and G.Y. Sung, / Appl. Phys. Lett. 86, 143107 (2005). CrossRef
12. H.L. Hao, L.K. Wu, and W.Z. Shen, / Appl. Phys. Lett. 92, 121922 (2008). CrossRef
13. L. Mangolini, / J. Vac. Sci. Technol. B 31, 020801 (2013). CrossRef
14. A.J. Nozik, / Chem. Phys. Lett. 457, 3 (2008). CrossRef
15. G.R. Lin, Y.H. Pai, C.T. Lin, and C.C. Chen, / Appl. Phys. Lett. 96, 263514 (2010). CrossRef
16. C.W. Jiang and M.A. Green, / J. Appl. Phys. 99, 114902 (2006). CrossRef
17. J.S. Biteen, N.S. Lewis, H.A. Atwater, and A. Polman, / Appl. Phys. Lett. 84, 5389 (2004). CrossRef
18. H. Mackel and R. Ludemann, / J. Appl. Phys. 92, 2602 (2002). CrossRef
19. A.G. Aberle, / Sol. Energy Mater. Sol. Cells 65, 239 (2001). CrossRef
20. X.J. Hao, E.-C. Cho, C. Flynn, Y.S. Shen, S.C. Park, G. Conibeer, and M.A. Green, / Sol. Energy Mater. Sol. Cells 93, 273 (2009). CrossRef
21. S. Yamada, Y. Kurokawa, S. Miyajima, and M. Konagai, / Nanoscale Res. Lett. 9, 246 (2014). CrossRef
22. B.H. Kim, C.H. Cho, S.J. Park, N.M. Park, and G.Y. Sung, / Appl. Phys. Lett. 89, 063509 (2006). CrossRef
23. W.G. Liao, X.B. Zeng, X.X. Wen, W.J. Zheng, and W. Yao, / J.?Electron. Mater. 42, 3445 (2013).
文摘
Silicon-rich silicon nitride (SRSN) films were prepared by plasma-enhanced chemical vapor deposition. Silicon quantum dots (Si QDs) were obtained after high temperature annealing. Fourier transform infrared spectroscopy, x-ray diffraction, Raman and x-ray photoelectron spectroscopy spectra were used to describe the structure behaviors of the as-deposited and annealed samples. The hydrogen-related bonds disappeared when the annealing temperature was above 650°C for 30?min. Crystalline and amorphous Si QDs co-existed in the SRSN film annealed at 1100°C. The photoluminescence (PL) spectra of the SRSN under Xe lamp were studied. The red-shift and blue-shift of PL peaks were ascribed to the size and phase evolution of Si QDs, and the PL intensity strongly depended on the passivation condition of Si QDs. The charge storage effect was investigated on Al/the SRSN annealed at 1100°C/n-Si/Al structure by capacitance–voltage (C-em class="a-plus-plus">V) measurements. The C-em class="a-plus-plus">V hysteresis width increased to 1.8?V at the sweeping voltage of ±10?V.