Effect of A Site and Oxygen Vacancies on the Structural and Electronic Properties of Lead-Free KTa0.5Nb0.5O3 Crystal
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  • 作者:Wenlong Yang ; Li Wang ; Jiaqi Lin ; Xiaokang Li
  • 刊名:Journal of Electronic Materials
  • 出版年:2016
  • 出版时间:July 2016
  • 年:2016
  • 卷:45
  • 期:7
  • 页码:3726-3733
  • 全文大小:1,100 KB
  • 刊物类别:Chemistry and Materials Science
  • 刊物主题:Chemistry
    Optical and Electronic Materials
    Characterization and Evaluation Materials
    Electronics, Microelectronics and Instrumentation
    Solid State Physics and Spectroscopy
  • 出版者:Springer Boston
  • ISSN:1543-186X
  • 卷排序:45
文摘
The structural and electronic properties of lead-free potassium tantalite niobate KTa0.5Nb0.5O3 (KTN) with A site vacancies \( V_{\rm{K}}^{0} \), \( V_{\rm{K}}^{1 - } \) and oxygen vacancies \( V_{\rm{O}}^{0} \), \( V_{\rm{O}}^{2 + } \), were investigated by first-principles calculations, which indicated that A site vacancies \( V_{\rm{K}}^{0} \) are likely to form in the KTN compared with \( V_{\rm{K}}^{1 - } \) , and oxygen vacancies \( V_{\rm{O}}^{2 + } \) are likely to form compared with \( V_{\rm{O}}^{0} \) in the KTN according to the investigation of formation energy. The results show that K and O vacancies have significant influence on the atomic interactions of the atoms and the electronic performance of the materials. And Ta atoms are more easily influenced by the K and O vacancies than the Nb atoms from the atomic displacements in KTN with K and O vacancies. The investigation of density of state indicates that the compensation of electrons in KTN with vacancies make the hybridization become stronger among Ta d, Nb d and O p orbitals. Besides, Mulliken population of all the Ta and Nb atoms in KTN with charged vacancies are influenced by complement electrons. The strength of the Nb-O bond is stronger than Ta-O based on the changes of bond lengths and Mulliken population.KeywordsKTa0.5Nb0.5O3first principlevacancieselectronic properties

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