Enhancement of the surface and structural properties of ZnO epitaxial films grown on Al₂O₃ substrates utilizing annealed ZnO buffer layers

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• 作者：Young Soo No ; Oleg Kononenko ; Yeon Sik Jung ; Won Kook Choi and Tae Whan Kima
• 关键词：ZnO epilayer ; Annealed ZnO buffer layer ; Surface property ; Structural property ; Polarity
• 刊名：Journal of Electroceramics
• 出版年：2006
• 出版时间：December, 2006
• 年：2006
• 卷：17
• 期：2-4
• 页码：283-285
• 全文大小：221 KB

文摘

ZnO films were grown on Al₂O₃ (1000) substrates without and with ZnO buffer layers by using radio-frequency magnetron sputtering. Atomic force microscopy images showed that the surface roughness of the ZnO films grown on ZnO buffer layers annealed in a vacuum was decreased, indicative of an improvement in the ZnO surfaces. X-ray diffraction patterns showed that the crystallinity of the ZnO thin films was enhanced by using the annealed ZnO buffer layer in comparison with the film grown on without a buffer layer. The improvement of the surface and structural properties of the ZnO films might be attributed to the formation of the Zn-face ZnO buffers due to annealing in a vacuum. These results indicate that the surface and structural properties of ZnO films grown on Al₂O₃ substrates are improved by using ZnO buffer layers annealed in a vacuum.