A novel SOI MESFET by \(\uppi \) -shaped gate for improving the driving curren

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• 作者：Hadi Shahnazarisani (1)
  Ali A. Orouji (1)
  Mohammad K. Anvarifard (1)
  
• 关键词：MESFET ; Maximum available gain ; Maximum oscillation frequency ; Silicon on insulator (SOI)
• 刊名：Journal of Computational Electronics
• 出版年：2014
• 出版时间：June 2014
• 年：2014
• 卷：13
• 期：2
• 页码：562-568
• 全文大小：
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• 作者单位：Hadi Shahnazarisani (1)
  Ali A. Orouji (1)
  Mohammad K. Anvarifard (1)
  
  1. Electrical and Computer Engineering Department, Semnan University, Semnan, Iran
  
• ISSN：1572-8137

文摘

This paper introduces a novel silicon-on-insulator (SOI) metal–semiconductor field-effect transistor (MESFET) with \(\uppi \) -shaped gate with triple workfunction ( \(\uppi \) -SOI MESFET) to improve the DC and radio frequency characteristics. The DC and radio frequency characteristics of the proposed structure are analyzed by 2-D ATLAS international simulator and compared with a conventional SOI MESFET (C-SOI MESFET). The simulated results show that the proposed SOI MESFET has excellent effect on the breakdown voltage and the driving current. The breakdown voltage of the \(\uppi \) -SOI MESFET structure gets 54?% enhancement compared with that of the C-SOI MESFET structure and also the driving current of the \(\uppi \) -SOI MESFET structure gets 66.66?% enhancement compared with that of the C-SOI MESFET structure. Other main characteristics such as maximum output power density, maximum oscillation frequency and maximum available gain have been evaluated and improved in the proposed structure.