Impact of device parameter variation on RF performance of gate electrode workfunction engineered (GEWE)-silicon nanowire (SiNW) MOSFET

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• 作者：Neha Gupta ; Ajay Kumar ; Rishu Chaujar
• 关键词：Power gains ; GEWE ; RF ; Silicon nanowire MOSFET ; Parasitic capacitance ; $$f_{\mathrm{T}}$$ f T and $$f_{\mathrm{MAX}}$$ f MAX
• 刊名：Journal of Computational Electronics
• 出版年：2015
• 出版时间：September 2015
• 年：2015
• 卷：14
• 期：3
• 页码：798-810
• 全文大小：3,475 KB
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• 作者单位：Neha Gupta (1)
  Ajay Kumar (1)
  Rishu Chaujar (1)
  
  1. Microelectronics Research Lab, Department of Engineering Physics, Delhi Technological University, Bawana Road, Delhi, 110042, India
  
• 刊物类别：Engineering
• 刊物主题：Electronic and Computer Engineering
  Optical and Electronic Materials
  Mathematical and Computational Physics
  Applied Mathematics and Computational Methods of Engineering
  Mechanical Engineering
  
• 出版者：Springer Netherlands
• ISSN：1572-8137

文摘

In this paper, we explore the quantitative investigation of the high-frequency performance of gate electrode workfunction engineered (GEWE) silicon nanowire (SiNW) MOSFET and compared with silicon nanowire MOSFET(SiNW MOSFET) using device simulators: ATLAS and DEVEDIT 3D. Simulation results demonstrate the improved RF performance exhibited by GEWE-SiNW MOSFET over SiNW MOSFET in terms of transconductance \((\hbox {g}_{\mathrm{m}})\), cut-off frequency \((f_{\mathrm{T}})\), maximum oscillator frequency \((f_{\mathrm{MAX}})\), power gains (Gma, G\({_\mathrm{MT}}\)) parasitic capacitances, stern’s stability factor and intrinsic delay. Further, using three-dimensional device simulations, we have also examined the efficacy of parameter variations in terms of oxide thickness, radius of silicon nanowire, channel length and gate metal workfunction engineering on RF/microwave figure of merits of GEWE-SiNW MOSFET. Simulation result reveals significant enhancement in \(f_{\mathrm{T}}\) and \(f_{\mathrm{MAX}}\); and a reduction in switching time in GEWE-SiNW MOSFET due to alleviated short channel effects, improved drain current and smaller parasitic capacitance, thus providing detailed knowledge about the device’s RF performance at such aggressively scaled dimensions.