Oxide bound impact on hot-carrier degradation for gate electrode workfunction engineered (GEWE) silicon nanowire MOSFET

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• 作者：Neha Gupta ; Ajay Kumar ; Rishu Chaujar
• 刊名：Microsystem Technologies
• 出版年：2016
• 出版时间：November 2016
• 年：2016
• 卷：22
• 期：11
• 页码：2655-2664
• 全文大小：1,448 KB
• 刊物类别：Engineering
• 刊物主题：Electronics, Microelectronics and Instrumentation
  Nanotechnology
  Mechanical Engineering
  Operating Procedures and Materials Treatment
  
• 出版者：Springer Berlin / Heidelberg
• ISSN：1432-1858
• 卷排序：22

文摘

In this present work, we explore the hot carrier fidelity of gate electrode workfunction engineered silicon nanowire (GEWE-SiNW) MOSFET at 300 K using DEVEDIT-3D device editor and ATLAS device simulation software. TCAD simulation shows reduction in the hot carrier reliability of a GEWE SiNW MOSFET in terms of electron temperature, electron velocity and Hot Electron gate current for reflecting its efficacy in high power CMOS applications. Further, a comparative investigation for different values of oxide thickness and high-k has been done to analyze the performance of GEWE-SiNW MOSFET in terms of electrical parameters such as conduction band, DIBL, electric field, electron temperature, electric velocity and gate current. It has been clearly shown that with oxide thickness 0.5 nm the hot-carrier reliability and device performance improves in comparison to oxide thickness 2.5 nm. In addition, with k = 21(HfO₂) device performance in terms of hot-carrier reliability further enhanced due to increased capacitance and thus offer its effectiveness in sub-nm range analog applications.