Determination of the Boron and Phosphorus Ionization Energies in Compensated Silicon by Temperature-Dependent Luminescence

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• 作者：Chengquan Xiao ; Deren Yang ; Xuegong Yu ; Luelue Xiang ; Duanlin Que
• 关键词：Silicon ; Dopant compensation ; Ionization energy ; Luminescence
• 刊名：Silicon
• 出版年：2017
• 出版时间：March 2017
• 年：2017
• 卷：9
• 期：2
• 页码：147-151
• 全文大小：
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Inorganic Chemistry; Materials Science, general; Optics, Lasers, Photonics, Optical Devices; Environmental Chemistry;
• 出版者：Springer Netherlands
• ISSN：1876-9918
• 卷排序：9

文摘

The determination of boron and phosphorus ionization energies in compensated silicon is very important for assessing the ionization level of dopants and their interaction with each other. In this paper, we achieved the boron and phosphorus ionization energies in compensated silicon by temperature-dependent luminescence for the first time. The results show that the boron and phosphorus ionization energies in heavily-compensated silicon have the same values as those in non-compensated silicon. This strongly suggests that both boron and phosphorus impurities with a concentration of ≤ 10 17 cm −3 should act as isolated acceptors and donors, but do not form complexes in silicon.