Structure and Optical Properties of Epitaxial Indium Oxide Films Deposited on Y-Stabilized ZrO2 (111) by MOCVD

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• 作者：Cansong Zhao ; Zhao Li ; Wei Mi ; Caina Luan ; Xianjin Feng…
• 关键词：YSZ (111) substrate ; crystal structure ; metal–organic chemical vapor deposition ; oxides
• 刊名：Journal of Electronic Materials
• 出版年：2015
• 出版时间：August 2015
• 年：2015
• 卷：44
• 期：8
• 页码：2719-2724
• 全文大小：2,227 KB
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• 作者单位：Cansong Zhao (1)
  Zhao Li (1)
  Wei Mi (1)
  Caina Luan (1)
  Xianjin Feng (1)
  Jin Ma (1)
  
  1. School of Physics, Shandong University, Jinan, 250100, Shandong, China
  
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Chemistry
  Optical and Electronic Materials
  Characterization and Evaluation Materials
  Electronics, Microelectronics and Instrumentation
  Solid State Physics and Spectroscopy
  
• 出版者：Springer Boston
• ISSN：1543-186X

文摘

Indium oxide (In2O3) films have been deposited on Y-stabilized ZrO2 (YSZ) (111) substrates, at temperatures from 500°C to 700°C, by metal–organic chemical vapor deposition. Structural analysis indicated that all the films were cubic bixbyite In2O3 with an out-of-plane relationship of In2O3 (222)||YSZ (111). Crystal quality was best for the film prepared at 600°C. The microstructure of this film was investigated by high-resolution transmission electron microscopy. A theoretical model is proposed for the mechanism of growth, and the in-plane epitaxial relationship of the single crystalline In2O3 film on the YSZ (111) substrate was shown to be In2O3 \( [01\overline{1} ] \)||YSZ \( [01\overline{1} ] \). Average transmittance of the samples in the visible region was >78%.