Effect of Sn content on the structural and photoelectric properties of IATO films
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- 作者：Xuejian Du ; Weiguang Wang ; Mingxian Wang ; Xianjin Feng…
- 刊名：Journal of Materials Science
- 出版年：2017
- 出版时间：January 2017
- 年：2017
- 卷：52
- 期：1
- 页码：367-374
- 全文大小：1,785 KB
- 刊物类别：Chemistry and Materials Science
- 刊物主题：Chemistry
Materials Science
Characterization and Evaluation Materials
Polymer Sciences
Continuum Mechanics and Mechanics of Materials
Crystallography
Mechanics - 出版者：Springer Netherlands
- ISSN：1573-4803
- 卷排序：52
文摘
Indium aluminum tin oxide (IATO) films with high Hall mobility have been deposited on the SiO2 (0001) substrates by metal organic chemical vapor deposition. The structural, morphological, and optoelectronic properties of the IATO films with Sn contents varied from 0 to 18 % [Sn/(In+Al+Sn) atomic ratio] were studied in detail. Well-crystallized IATO film with the highest Hall mobility of 15.59 cm2 V−1 s−1 was obtained at 15 % of Sn content, and the corresponding carrier concentration and resistivity were about 2.38 × 1020 and 1.51 × 10−3 Ω cm, respectively. The average transmittance for all the obtained films in the visible range was over 81 %, and the optical band gap of the films changed in the range of 4.05–5.03 eV.