Synthesis and characteristics of KTa0.5Nb0.5O3 thin films
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- 作者：Bing Liu (1)
Xuping Wang (1)
Yuanyuan Zhang (1)
Xianshun Lv (1)
Yuguo Yang (1) - 关键词：KTN ; Thin films ; Metal ; organic solution deposition ; Electric properties
- 刊名：Ionics
- 出版年：2014
- 出版时间：December 2014
- 年：2014
- 卷：20
- 期：12
- 页码：1795-1799
- 全文大小：1,024 KB
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Yuguo Yang (1)
1. New materials Research Institute, Shandong Academy of Sciences, Jinan, 250014, China - ISSN：1862-0760
文摘
KTa0.5Nb0.5O3 thin films were synthesized via a metal-organic solution. Characteristics were measured, such as X-ray diffraction pattern, surface morphology and roughness, and electric properties. The synthesized films have a (100) preferential growth orientation on Si (100) substrate. The homogeneous microstructure and smooth surface benefit to the good electric properties of the thin films. The current density-voltage characteristic shows an unexpected feature of the transition from linear to nonlinear, which can be explained by the space-charge-limited mode. Dielectric constant and loss of the thin films decrease with the increase of frequency. The decrease of dielectric loss is related to the decrease of net polarization in material. The decrease of dielectric constant can be explained by Debye formula. The phase transition temperature T c is about 102?°C for KTa0.5Nb0.5O3 materials.