文摘
The as-grown n- and p-type polycrystalline PbSe thin films are fabricated by vapor phase deposition using substrate temperature regulation. The surface polycrystalline structures and photoelectric properties of n- and p-type polycrystalline PbSe films are provided. Surface composition of n-type-sensitized PbSe film has been analyzed according to X-ray photoelectron spectroscopy results. The oxygen roles in n- and p-type PbSe polycrystalline films during the sensitization process are studied experimentally, respectively. The dependence of sensitized photoelectric performance on the initial conductive state has been firstly observed and discussed, as we know presently. It is revealed that oxygen can trigger photo-response in the sensitization process for n-type PbSe film, but not for p-type. These discussions may be useful for understanding the sensitization mechanism of lead salt materials.