Band alignments of Olus-plus">3-based and Hlus-plus">2O-based amorphous LaAlOlus-plus">3 films on silicon by atomic layer deposition
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- 作者：Lu Zhao ; Hongxia Liu ; Xing Wang…
- 刊名：Journal of Materials Science: Materials in Electronics
- 出版年：2017
- 出版时间：January 2017
- 年：2017
- 卷：28
- 期：1
- 页码：803-807
- 全文大小：
- 刊物类别：Chemistry and Materials Science
- 刊物主题：Optical and Electronic Materials; Characterization and Evaluation of Materials;
- 出版者：Springer US
- ISSN：1573-482X
- 卷排序：28
文摘
Amorphous LaAlO3 films were grown on p-type Si substrate by atomic layer deposition using O3 and H2O as the oxygen source, respectively. Band alignments of LaAlO3 films were analyzed by X-ray photoelectron spectroscopy measurements using the photoemission-based method. Extra hydroxyl groups and C and N-related impurities were detected in the H2O-based LaAlO3 film. As a result, the O3-based LaAlO3 dielectric gains higher band gap and band offsets than those of the H2O-based dielectric. Consequently, for the O3-based film, the leakage current of more than one order of magnitude less than that of H2O-based LaAlO3 film was obtained. All the results indicate that O3 is a more appropriate oxidant for the deposition of LaAlO3 dielectric.