Numerical study of three phase shifts and dual corrugation pitch modulated (CPM) DFB semiconductor lasers based on reconstruction equivalent chirp technology
详细信息 查看全文
- 作者：YueChun Shi (1) (2)
XingHua Tu (1) (3)
SiMin Li (1)
YaTing Zhou (1)
LingHui Jia (1)
XiangFei Chen (1) - 关键词：semiconductor laser ; distributed feedback (DFB) ; multiple phase shifts ; corrugation pitch modulated (CPM) ; reconstruction equivalent chirp (REC)
- 刊名：Chinese Science Bulletin
- 出版年：2010
- 出版时间：December 2010
- 年：2010
- 卷：55
- 期：35
- 页码：4083-4088
- 全文大小：750KB
- 参考文献：1. Kazovsky L G, Shaw W, Gutierrez D, et al. Next-generation optical access networks. J Lightw Technol, 2007, 25: 3428鈥?442 CrossRef
2. Duan P, Chen L, Zhang S, et al. All-optical 2R regeneration based on self-induced polarization rotation in single semiconductor optical amplifier. Chinese Sci Bull, 2009, 54: 3704鈥?708 CrossRef
3. Liu Y, Chen S, Wang X, Yuan H, et al. Overall optimization of high-speed semiconductor laser modules. Chinese Sci Bull, 2009, 54: 3697鈥?703 CrossRef
4. Corbett B, Percival C, Lambkin P. Multiwavelength array of single-frequency stabilized Fabry-perot lasers. IEEE J Quantum Electron, 2005, 41: 490鈥?95 CrossRef
5. Zeng D, Sun C, Xie S, et al. Numerical analysis of semiconductor lasers with FBG external cavity reflectors. Sci China Ser E: Tech Sci, 2000, 43: 505鈥?10
6. Xia G, Wu Z, Yang Q, et al. Modulation response performances of a Fabry-Perot semiconductor laser subjected to light injection from another Fabry-Perot semiconductor laser. Chinese Sci Bull, 2009, 54: 3643鈥?648 CrossRef
7. Buus J, Murphy E J, Tunbale lasers in optical Networks. J Lightw Technol, 2006, 24: 5鈥?1 CrossRef
8. Lowery A J, Olesen H. Dynamics of mode-instabilities in quarter-wave-shifted DFB semiconductor lasers. Electron Lett, 1994, 30: 965鈥?67 CrossRef
9. Wang M, Wei Q, Hui Y, et al. Research of high speed optical switch based on compound semiconductor. Chinese Sci Bull, 2009, 54: 3679鈥?684 CrossRef
10. Correc P. Stability of phase-shifted DFB lasers against hole burning. IEEE J Quantum Electron, 1994, 30: 2467鈥?476 CrossRef
11. Lowery A J. Dynamics of SHB-induced mode instability in uniform DFB semiconductor lasers. Electron Lett, 1993, 29: 1852鈥?854 CrossRef
12. Agrawal G P, Bobeck A H. Modeling of distributed feedback semiconductor lasers with axially-varying parameters. IEEE J Quantum Electron, 1988, 24: 2407鈥?414 CrossRef
13. Agrawal G P, Geusic J E, Anthony P J. Distributed feedback lasers with multiple phase-shift regions. Appl Phys Lett, 1988, 53: 178鈥?79 CrossRef
14. Okai M, Chinone N, Taira H, et al. Corrugation-pitch-modulated phase-shifted DFB laser. IEEE Photon Technol Lett, 1989, 1: 200鈥?01 CrossRef
15. Okai M, Suzuki M, Taniwatari T. Strained multiquantum-well corrugation-pitch-modulated distributed feedback laser with ultranarrow (3.6 kHz) spectral linewidth. Electron Lett, 1993, 29: 529鈥?30 CrossRef
16. Dai Y, Chen X, Xia L, et al. Sampled Bragg grating with desired response in one channel by using of a reconstrution algorithm and equivalent chirp. Opt Lett, 2004, 29: 1333鈥?335 CrossRef
17. Jiang D, Chen X, Dai Y, et al. A novel distributed feedback fiber laser based on equivalent phase shift. IEEE Photon Technol Lett, 2004, 16: 2598鈥?600 CrossRef
18. Dai Y, Chen X. DFB semiconductor lasers based on reconstruction-equivalent-chirp technology. Opt Expr, 2007, 15: 2348鈥?353 CrossRef
19. Li J, Wang H, Chen X, et al. Experimental demonstration of distributed feedback semiconductor lasers based on reconstruction-equivalent-chirp technology. Opt Expr, 2009,17: 5240鈥?245 CrossRef
20. Lo S K B, Ghafouri-Shiraz H. A method to determine the above-threshold stability of distributed feedback semiconductor laser diodes. J lightw Technol, 1995,13: 563鈥?68 CrossRef
21. Makino T. Transfer-Matrix analysis of the intensity and phase noise of multisection DFB semiconductor lasers. IEEE J Quantum Electron, 1991, 27: 2404鈥?414 CrossRef
22. Whiteaway J E A, Thompson G H B, Collar A J, et al. The design and assessment of / 位/4 phase-shifted DFB laser structures. IEEE J Quantum Electron, 1989, 25: 1261鈥?279 CrossRef
23. Fanf W, Hsu A, Chuang S L, et al. Measurement and modeling of distributed-feedback lasers with spatial hole buring. IEEE J Selected Quantum Electron, 1997, 3: 547鈥?54 CrossRef
24. Kimura T, Sugimura A. Coupled phase-shift distributed-feedback semiconductor lasers for Narrow linewidth operation. IEEE J Quantum Electron, 1989, 25: 678鈥?83 CrossRef - 作者单位：YueChun Shi (1) (2)
XingHua Tu (1) (3)
SiMin Li (1)
YaTing Zhou (1)
LingHui Jia (1)
XiangFei Chen (1)
1. Microwave-Photonics Technology Laboratory, National Laboratory of Microstructures, Nanjing University, Nanjing, 210093, China
2. Department of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, China
3. Microfluidics and Optics Technology Research Center, College of Opto-Electronic Engineering, Nanjing University of Posts and Telecommunication, Nanjing, 210003, China - ISSN：1861-9541
文摘
A distributed feedback (DFB) semiconductor laser with three phase shifts based on reconstruction equivalent chirp (REC) technology is proposed and investigated numerically. With the combination of multiple phase shifts and corrugation pitch modulated (CPM) structure, we also propose a novel and more complex structure named dual CPM, which has a flatter light power distribution along the laser cavity compared with the true double phase shifts DFB laser diode (LD), while the P-I curves are nearly the same. The proposed dual CPM structure is also designed and analyzed based on REC technology. The simulation results show that, the DFB semiconductor laser with complex structure such as phase shifts, or even arbitrary variation of the grating period can be achieved equivalently and easily by changing the sampling structure. But its external characteristics are almost the same as those DFB lasers with true phase shifts, or true arbitrary variation of the grating period. The key advantage of the REC technology is that it varies only the sampling structure and keeps the seed grating (actual grating in sampling structure) period constant. So its fabrication needs only low-cost and standard holographic exposure technology. Therefore we believe this method can achieve the high-end and low-cost DFB LD for mass production.