Ferroelectric memory based on nanostructures
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- 作者：Xingqiang Liu (1)
Yueli Liu (2)
Wen Chen (2)
Jinchai Li (1)
Lei Liao (1) - 刊名：Nanoscale Research Letters
- 出版年：2012
- 出版时间：December 2012
- 年：2012
- 卷：7
- 期：1
- 全文大小：1391KB
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Yueli Liu (2)
Wen Chen (2)
Jinchai Li (1)
Lei Liao (1)
1. Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, People鈥檚 Republic of China
2. State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, and School of Materials Science and Engineering, Wuhan University of Technology, Wuhan, 430070, People鈥檚 Republic of China - ISSN：1556-276X
文摘
In the past decades, ferroelectric materials have attracted wide attention due to their applications in nonvolatile memory devices (NVMDs) rendered by the electrically switchable spontaneous polarizations. Furthermore, the combination of ferroelectric and nanomaterials opens a new route to fabricating a nanoscale memory device with ultrahigh memory integration, which greatly eases the ever increasing scaling and economic challenges encountered in the traditional semiconductor industry. In this review, we summarize the recent development of the nonvolatile ferroelectric field effect transistor (FeFET) memory devices based on nanostructures. The operating principles of FeFET are introduced first, followed by the discussion of the real FeFET memory nanodevices based on oxide nanowires, nanoparticles, semiconductor nanotetrapods, carbon nanotubes, and graphene. Finally, we present the opportunities and challenges in nanomemory devices and our views on the future prospects of NVMDs.