Spin transport in undoped InGaAs/AlGaAs multiple quantum well studied via spin photocurrent excited by circularly polarized light
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- 作者：Laipan Zhu ; Yu Liu ; Wei Huang ; Xudong Qin ; Yuan Li ; Qing Wu…
- 关键词：Spin diffusion ; Spin drift ; The circularly polarized light ; The reciprocal spin Hall effect
- 刊名：Nanoscale Research Letters
- 出版年：2016
- 出版时间：December 2016
- 年：2016
- 卷：11
- 期：1
- 全文大小：987 KB
- 参考文献：1.žutić I, Fabian J, Sarma SD (2004) Spintronics: fundamentals and applications. Rev Mod Phys 76(2): 323.CrossRef
2.Wu MW, Jiang JH, Weng MQ (2010) Spin dynamics in semiconductors. Phys Rep 493(2): 61.CrossRef
3.He XW, Shen B, Chen YH, Zhang Q, Han K, Yin CM, Tang N, Xu FJ, Tang CG, Yang ZJao (2008) Anomalous photogalvanic effect of circularly polarized light incident on the two-dimensional electron gas in Al x Ga 1−x N/GaN heterostructures at room temperature. Phys Rev Lett 101(14): 147402.CrossRef
4.Mei FH, Tang N, Wang XQ, Duan JX, Zhang S, Chen YH, Ge WK, Shen B (2012) Detection of spin-orbit coupling of surface electron layer via reciprocal spin Hall effect in InN films. Appl Phys Lett 101(13): 132404.CrossRef
5.Duan JX, Tang N, Ye JD, Mei FH, Teo KL, Chen YH, Ge WK, Shen B (2013) Anomalous circular photogalvanic effect of the spin-polarized two-dimensional electron gas in Mg 0.2 Zn 0.8O/ZnO heterostructures at room temperature. Appl Phys Lett 102(19): 192405.CrossRef
6.Saitoh E, Ueda M, Miyajima H, Tatara G (2006) Conversion of spin current into charge current at room temperature: inverse spin-Hall effect. Appl Phys Lett 88(18): 182509.CrossRef
7.Miah MI (2007) Observation of the anomalous Hall effect in GaAs. J Phys D: Appl Phys 40(6): 1659.CrossRef
8.Yin CM, Tang N, Zhang S, Duan JX, Xu FJ, Song J, Mei FH, Wang XQ, Shen B, Chen YH, Yu JL, Ma H (2011) Observation of the photoinduced anomalous Hall effect in GaN-based heterostructures. Appl Phys Lett 98(12): 122104.CrossRef
9.Yu JL, Chen YH, Jiang CY, Liu Y, Ma H, Zhu LP (2012) Observation of the photoinduced anomalous Hall effect spectra in insulating InGaAs/AlGaAs quantum wells at room temperature. Appl Phys Lett 100(14): 142109.CrossRef
10.Zhu LP, Liu Y, Jiang CY, Yu JL, Gao HS, Ma H, Qin XD, Li Y, Wu Q, Chen YH (2014) Spin depolarization under low electric fields at low temperatures in undoped InGaAs/AlGaAs multiple quantum well. Appl Phys Lett 105(15): 152103.CrossRef
11.Mei FH, Zhang S, Tang N, Duan JX, Xu FJ, Chen YH, Ge WK, Shen B (2014) Spin transport study in a Rashba spin-orbit coupling system. Sci Rep 4: 4030.
12.Yu JL, Chen YH, Jiang CY, Liu Y, Ma H (2011) Room-temperature spin photocurrent spectra at interband excitation and comparison with reflectance-difference spectroscopy in InGaAs/AlGaAs quantum wells. J Appl Phys 109(5): 053519.CrossRef
13.Zhu LP, Liu Y, Jiang CY, Qin XD, Li Y, Gao HS, Chen YH (2014) Excitation wavelength dependence of the anomalous circular photogalvanic effect in undoped InGaAs/AlGaAs quantum wells. J Appl Phys 115(8): 083509.CrossRef
14.Shen SQ (2005) Spin transverse force on spin current in an electric field. Phys Rev Lett 95: 187203.CrossRef
15.Ando K, Takahashi S, Ieda J, Kurebayashi H, Trypiniotis T, Barnes CHW, Maekawa S, Saitoh E (2011) Electrically tunable spin injector free from the impedance mismatch problem. Nat Mater 10(9): 655.CrossRef
16.Gvozdic DM, Ekenberg U (2006) Superefficient electric-field-induced spin-orbit splitting in strained p-type quantum wells. Europhys Lett 73(6): 927.CrossRef
17.Dai X, Zhang FC (2007) Light-induced Hall effect in semiconductors with spin-orbit coupling. Phys Rev B 76(8): 085343.CrossRef
18.Winkler R (2003) Spin-orbit coupling effects in two-dimensional electron and hole systems, Vol. 191. Springer, Germany.CrossRef
19.Malinowski A, Britton RS, Grevatt T, Harley RT, Ritchie DA, Simmons MY (2000) Spin relaxation in GaAs/Al x Ga 1−x As quantum wells. Phys Rev B 62: 13034.CrossRef
20.Lü C, Cheng JL, Wu MW (2006) Hole spin dephasing in p-type semiconductor quantum wells. Phys Rev B 73(12): 125314.CrossRef
21.Mendez EE, Price PJ, Heiblum M (1984) Temperature dependence of the electron mobility in GaAs-GaAlAs heterostructures. Appl Phys Lett 45(3): 294.CrossRef
22.Störmer HL, Gossard AC, Wiegmann W, Blondel R, Baldwin K (1984) Temperature dependence of the mobility of two-dimensional hole systems in modulation-doped GaAs-(AlGa) As. Appl Phys Lett 44(1): 139.CrossRef - 作者单位：Laipan Zhu (1) (2)
Yu Liu (1)
Wei Huang (1)
Xudong Qin (1)
Yuan Li (1)
Qing Wu (1)
Yonghai Chen (1)
1. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, People’s Republic of China
2. Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, National Center for Nanoscience and Technology (NCNST), Beijing, 100083, People’s Republic of China - 刊物主题：Nanotechnology; Nanotechnology and Microengineering; Nanoscale Science and Technology; Nanochemistry; Molecular Medicine;
- 出版者：Springer US
- ISSN：1556-276X
文摘
The spin diffusion and drift at different excitation wavelengths and different temperatures have been studied in undoped InGaAs/AlGaAs multiple quantum well (MQW). The spin polarization was created by optical spin orientation using circularly polarized light, and the reciprocal spin Hall effect was employed to measure the spin polarization current. We measured the ratio of the spin diffusion coefficient to the mobility of spin-polarized carriers. From the wavelength dependence of the ratio, we found that the spin diffusion and drift of holes became as important as electrons in this undoped MQW, and the ratio for light holes was much smaller than that for heavy holes at room temperature. From the temperature dependence of the ratio, the correction factors for the common Einstein relationship for spin-polarized electrons and heavy holes were firstly obtained to be 93 and 286, respectively. Keywords Spin diffusion Spin drift The circularly polarized light The reciprocal spin Hall effect