Effects of Mg doping content and annealing temperature on the structural properties of Zn1-x Mg x O thin films prepared by radio-frequency magnetron sputtering
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- 作者：Wen-han Du 杜文汉 ; Jing-jing Yang 杨景景 ; Yu Zhao 赵宇 ; Chao Xiong 熊超
- 刊名：Optoelectronics Letters
- 出版年：2017
- 出版时间：January 2017
- 年：2017
- 卷：13
- 期：1
- 页码：42-44
- 全文大小：
- 刊物类别：Physics and Astronomy
- 刊物主题：Optics, Lasers, Photonics, Optical Devices;
- 出版者：Tianjin University of Technology
- ISSN：1993-5013
- 卷排序：13
文摘
The doping content of Mg plays an important role in the crystalline structure and morphology properties of Zn1-xMgxO thin films. Here, using radio-frequency magnetron sputtering method, we prepared Zn1-xMgxO thin films on single crystalline Si(100) substrates with a series of x values. By means of X-ray diffraction (XRD) and scanning electron microscope (SEM), the crystalline structure and morphology of Zn1-xMgxO thin films with different x values are investigated. The crystalline structure of Zn1-xMgxO thin film is single phase with x<0.3, while there is phase separation phenomenon with x>0.3, and hexagonal and cubic structures will coexist in Zn1-xMgxO thin films with higher x values. Especially with lower x values, a shoulder peak of 35.1° appearing in the XRD pattern indicates a double-crystalline structure of Zn1-xMgxO thin film. The crystalline quality has been improved and the inner stress has been released, after the Zn1-xMgxO thin films were annealed at 600 °C in vacuum condition.