x La x Ti1?em class="EmphasisTypeItalic">x/4O3 (x?=?0-) were prepared via a mixed oxide solid state sintering route. X-ray diffraction analysis revealed the formation of single phase compounds with orthorhombic (Pbnm) symmetry for x?≤?.25. At x?≥?.5, A n B n?O3n type B-site deficient hexagonal perovskite phases formed along with minor secondary phases. The grain size and morphology and hence, the microwave dielectric properties varied substantially with change in dopant concentration (x). The optimum microwave dielectric properties (εr?=?45.3, Q?×?f o?=?20506?GHz and τf?=??4.8?ppm/°C) were achieved at x?=?0.75." />