Nano-embossing technology on ferroelectric thin film Pb(Zr0.3,Ti0.7)O3 for multi-bit storage application

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• 作者：Zhenkui Shen (1)
  Zhihui Chen (1)
  Qian Lu (2)
  Zhijun Qiu (1)
  Anquan Jiang (1)
  Xinping Qu (1)
  Yifang Chen (3)
  Ran Liu (1)
  
• 刊名：Nanoscale Research Letters
• 出版年：2011
• 出版时间：December 2011
• 年：2011
• 卷：6
• 期：1
• 全文大小：435KB
• 参考文献：1. Scott JF: lus-plus">Application of modern ferroelectrics. / Science 2007, lus-plus">315:954鈥?59. CrossRef
  2. Waser R, R眉diger A: lus-plus">Ferroelectrics: pushing towards the digital storage limit. / Nat Mater 2004, lus-plus">3:81鈥?2. CrossRef
  3. Lee W, Han H, Lotnyk A, Schubert MA, Senz S, Alexe M, Hesse D, Baik S, G枚sele U: lus-plus">Indiviually addressable epitaxial ferroelectric nanocapacitor with near tb inch ^{lus-plus"> lus-plus">-2} lus-plus">density. / Nat Nanotechnol 2008, lus-plus">3:402鈥?07. CrossRef
  4. Cofer A, Rajora P, Deornellas S, Keil D: lus-plus">Plasma etch processing of advanced ferroelectric devices. / Integr Ferroelectr 1997, lus-plus">16:53鈥?1. CrossRef
  5. Deornellas S, Rajora P, Cofer A: lus-plus">Challenges for plasma etch integration of ferroelectric capacitors in FeRAM's and DRAM's. / Integr Ferroelectr 1997, lus-plus">17:395鈥?02. CrossRef
  6. Ishihara K, Ishikawa T, Hamada K, Onishi S, Kudo J, Sakiyama K: lus-plus">The degradation of ferroelectric properties of pzt thin films due to plasma damage. / Integr Ferroelectr 1995, lus-plus">6:301鈥?07. CrossRef
  7. Schift H: lus-plus">Nanoimprint lithography: an old story in modern times? A review. / J Vac Sci Technol B 2008, lus-plus">26:458鈥?80. CrossRef
  8. Guo LJ: lus-plus">Nanoimprint lithography: methods and material requirements. / Adv Mater 2007, lus-plus">19:495. CrossRef
  9. Hu ZJ, Tian M, Nysten B, Jonas AM: lus-plus">Regular arrays of highly ordered ferroelectric polymer nanostructrues for non-volatile low-voltage memories. / Nat Mater 2009, lus-plus">8:62鈥?7. CrossRef
  10. Zhang L, Ducharme S, Li JY: lus-plus">Microimprinting and ferroelectric properties of poly(vinylidene fluoride-trifluoroethylene) copolymer films. / Appl Phys Lett 2007, lus-plus">91:172906鈥?72908. CrossRef
  11. Liu Y, Weiss DN, Li J: lus-plus">Rapid nanoimprinting and excellent piezorepsonse of polymeric ferroelectric nanostructures. / ACS Nano 2010, lus-plus">4:83鈥?0. CrossRef
  12. Setter N, Damjanovic D, Eng L, Fox G, Gevorgian S, Hong S, Kingon A, Kohlstedt H, Park NY, Stephenson GB, Stolitchnov I, Taganstev AK, Taylor DV, Yamada T, Streiffer S: lus-plus">Ferroelectric thin films: review of materials, properties, and applications. / J Appl Phys 2006, lus-plus">100:051606鈥?51651. CrossRef
  13. Shen ZK, Chen ZH, Qiu ZJ, Lu BR, Wang J, Deng SR, Jiang AQ, Qu XP, Liu R, Chen YF: lus-plus">Influences of embossing technology on Pb(Zr _{lus-plus"> lus-plus">0.3} lus-plus">,Ti _{lus-plus"> lus-plus">0.7} lus-plus">)O _{lus-plus"> lus-plus">3} lus-plus">ferroelectric thin film. / Micorelectron Eng 2010, lus-plus">87:869鈥?71. CrossRef
  14. Gruverman A, Kalinin SV: lus-plus">Piezoresponse force microscopy and recent advances in nanoscale studies of ferroelectrics. / J Mater Sci 2006, lus-plus">41:107鈥?16. CrossRef
  15. Ivry Y, Chu DP, Durkan C: lus-plus">Nanometer resolution piezorepsonse force microscopy to study deep submicron ferroelectric and ferroelastic domains. / Appl Phys Lett 2009, lus-plus">94:162903鈥?62905. CrossRef
  16. Shen Z, Chen Z, Lu Q, Jiang A, Qiu Z, Qu X, Chen Y, Liu R: lus-plus">Characterizations of nanoembossed Pb(Zr _{lus-plus"> lus-plus">0.3} lus-plus">,Ti _{lus-plus"> lus-plus">0.7} lus-plus">)O _{lus-plus"> lus-plus">3} lus-plus">ferroelectric films. / J Vac Sci Technol B 2010, lus-plus">28:C6M28-C6M31. CrossRef
  17. Brazier M, McElfresh M, Mansour S: lus-plus">Origin of anomalous polarization offsets in compositonally graded Pb(Zr, Ti)O _{lus-plus"> lus-plus">3} lus-plus">thin films. / Appl Phys Lett 1999, lus-plus">74:299鈥?01. CrossRef
  18. Scott JF, Dawber M: lus-plus">Oxygen-vacancy ordering as a fatigue mechanism in perovskite ferroelectrics. / Appl Phys Lett 2000, lus-plus">76:3801鈥?803. CrossRef
  19. Warren WL, Tuttle BA, Dimos DB: lus-plus">Ferroelectric fatigue in perovskite oxides. / Appl Phys Lett 1995, lus-plus">67:1426鈥?428. CrossRef
  20. Jiang AQ, Lin YY, Tang TA: lus-plus">Coexisting depinning effect of domain walls during the fatigue in ferroelectric thin films. / Appl Phys Lett 2006, lus-plus">89:032906鈥?32906. CrossRef
  21. Jiang AQ, Lin YY, Tang TA: lus-plus">Charge injection and polarization fatigue in ferroelectric thin films. / J Appl Phys 2007, lus-plus">102:074109鈥?74117. CrossRef
  
• 作者单位：Zhenkui Shen (1)
  Zhihui Chen (1)
  Qian Lu (2)
  Zhijun Qiu (1)
  Anquan Jiang (1)
  Xinping Qu (1)
  Yifang Chen (3)
  Ran Liu (1)
  
  1. ASIC & System State Key Laboratory, Department of Microelectronics, Fudan University, Shanghai, 200433, China
  2. Department of Material Science, Fudan University, Shanghai, 200433, China
  3. Rutherford Appleton Laboratory, Chilton, Didcot, Oxfordshire, OX11 0QX, UK
  
• ISSN：1556-276X

文摘

In this work, we apply nano-embossing technique to form a stagger structure in ferroelectric lead zirconate titanate [Pb(Zr0.3, Ti0.7)O3 (PZT)] films and investigate the ferroelectric and electrical characterizations of the embossed and un-embossed regions, respectively, of the same films by using piezoresponse force microscopy (PFM) and Radiant Technologies Precision Material Analyzer. Attributed to the different layer thickness of the patterned ferroelectric thin film, two distinctive coercive voltages have been obtained, thereby, allowing for a single ferroelectric memory cell to contain more than one bit of data.