Apparatus for Measuring Spectral Emissivity of Solid Materials at Elevated Temperatures
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  • 作者:Dengfeng Ren ; Hong Tan ; Yimin Xuan ; Yuge Han…
  • 关键词:Emissivity ; FTIR spectrometer ; High temperature ; Radiative property ; Spectral
  • 刊名:International Journal of Thermophysics
  • 出版年:2016
  • 出版时间:May 2016
  • 年:2016
  • 卷:37
  • 期:5
  • 全文大小:2,197 KB
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  • 作者单位:Dengfeng Ren (1)
    Hong Tan (1)
    Yimin Xuan (1) (2)
    Yuge Han (1)
    Qiang Li (1)

    1. School of Energy and Power Engineering, Nanjing University of Science and Technology, Nanjing, 210094, Jiangsu, China
    2. College of Energy and Power Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, Jiangsu, China
  • 刊物类别:Physics and Astronomy
  • 刊物主题:Physics
    Condensed Matter
    Mechanics
    Industrial Chemistry and Chemical Engineering
    Physical Chemistry
  • 出版者:Springer Netherlands
  • ISSN:1572-9567
文摘
Spectral emissivity measurements at high temperature are of great importance for both scientific research and industrial applications. A method to perform spectral emissivity measurements is presented based on two sample heating methods, the flat plate and tubular furnace. An apparatus is developed to measure the normal spectral emissivity of solid material at elevated temperatures from 1073 K to 1873 K and wavelengths from \(2\,\upmu \hbox {m}\) to \(25\,\upmu \hbox {m}\). Sample heating is accomplished by a torch flame or a high temperature furnace. Two different variable temperature blackbody sources are used as standard references and the radiance is measured by a FTIR spectrometer. Following calibration of the spectral response and background radiance of the spectrometer, the effect of the blackbody temperature interval on calibration results is discussed. Measurements are performed of the normal spectral emissivity of SiC and graphite over the prescribed temperature and wavelength range. The emissivity of SiC at high temperatures is compared with the emissivity at room temperature, and the influence of an oxide layer formed at the surface of SiC on the emissivity is studied. The effect of temperature on the emissivity of graphite is also investigated. Furthermore, a thorough analysis of the uncertainty components of the emissivity measurement is performed.

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