Application of block diagonal technique to a Hamiltonian matrix in performing spin-splitting calculations for GaN wurtzite materials

详细信息    查看全文

• 作者：Chun-Nan Chen (1)
  Sheng-Hsiung Chang (2)
  Wei-Long Su (3)
  Wan-Tsang Wang (4)
  Hsiu-Fen Kao (4)
  Jen-Yi Jen (1)
  Yiming Li (5)
  
• 关键词：Spin splitting ; Inversion asymmetry ; GaN ; Dresselhaus ; Wurtzite
• 刊名：Journal of the Korean Physical Society
• 出版年：2012
• 出版时间：February 2012
• 年：2012
• 卷：60
• 期：3
• 页码：403-409
• 全文大小：175KB
• 参考文献：1. G. Prinz, Science 282, 1660 (1998). CrossRef
  2. S. D. Sarma, Am. Sci. 89, 516 (2001).
  3. S. A. Wolf and D. Treger, IEEE Trans. Magn. 36, 2748 (2000). CrossRef
  4. P. Pfeffer and W. Zawadzki, Phys. Rev. B 72, 035325 (2005). CrossRef
  5. L. Jiang and M. W. Wu, Phys. Rev. B 72, 033311 (2005). CrossRef
  6. G. Bastaau]rd, Phys. Rev. B 46, 4253 (1992). CrossRef
  7. H. L. St?rmer, Z. Schlesinger, A. Chang, D. C. Tsui, A. C. Gossard and W. Wiegmann, Phys. Rev. Lett. 51, 126 (1983). CrossRef
  8. J. P. Eisenstein, H. L. St?rmer, U. Narayanaumurti, A. C. Gossard and W. Wiegmann, Phys. Rev. Lett. 53, 2579 (1984). CrossRef
  9. I. ?uti?, J. Fabian and S. D. Sarma, Rev. Mod. Phys. 76, 323 (2004). CrossRef
  10. I. Lo, M. H. Gau, J. K. Tsai, Y. L. Chen, Z. J. Chang, W. T. Wang, J. C. Chiang, T. Aggerstam and S. Lourdudoss, Phys. Rev. B 75, 245307 (2007). CrossRef
  11. D. D. Awschalom, D. Loss and N. Samarth, / Semiconductor Spintronics and Quantum Computation (Springer-Verlag Publications, Berlin, 2002).
  12. G. Dresselhaus, Phys. Rev. 100, 580 (1955). CrossRef
  13. Y. A. Bychkov and E. I. Rashba, J. Phys. C 17, 6039 (1984). CrossRef
  14. B. Beschoten / et al., Phys. Rev. B 63, 121202 (R) (2001). CrossRef
  15. J. H. Buss, J. Rudolph, F. Natali, F. Semond and D. Hagele, Phys. Rev. B 81, 155216 (2010). CrossRef
  16. I. Lo / et al., Phys. Rev. B 65, 161306 (2002). CrossRef
  17. C. N. Chen / et al., J. Appl. Phys. 104, 024901 (2008). CrossRef
  18. C. N. Chen, Y. H. Wang, M. P. Houng and J. C. Chiang, Jpn. J. Appl. Phys., Part 1 41, 36 (2002). CrossRef
  19. W. A. Harrison, / Electronic Structure and the Properties of Solids: The Physics of the Chemical Bond (Dover Publications, New York, 1989).
  20. A. Kobayashi, O. F. Sankey, S. M. Volz and J. D. Dow, Phys. Rev. B 28, 935 (1983). CrossRef
  21. C. N. Chen, Phys. Rev. B 72, 085305 (2005). CrossRef
  22. C. N. Chen, J. Appl. Phys. 96, 7374 (2004). CrossRef
  23. C. N. Chen, S. H. Chang, M. L. Hung, J. C. Chiang, I. Lo, W. T. Wang, M. H. Gau, H. F. Kao and M. E. Lee, J. Appl. Phys. 101, 043104 (2007). CrossRef
  24. Y. C. Chang, Phy. Rev. B 37, 8215 (1988). CrossRef
  25. S. L. Chuang and C. S. Chang, Phys. Rev. B 54, 2491 (1996). CrossRef
  26. D. W. Jenkins and J. D. Dow, Phys. Rev. B 39, 3317 (1996). CrossRef
  27. E. O. Kane, / Semiconductors and Semimetals, edited by R. K. Willardson and A. C. Beer (Academic Press, New York, 1966), Vol. 1, p. 75. CrossRef
  28. C. N. Chen, S. H. Chang, M. E. Lee, J. C. Chiang, I. Lo, W. T. Wang, M. H. Gau and H. F. Kao, J. Appl. Phys. 101, 046105 (2007). CrossRef
  29. W. T. Wang / et al., Appl. Phys. Lett. 91, 082110 (2007). CrossRef
  30. C. M. Yin, B. Shen, Q. Zhang, F. J. Xu, N. Tang, L. B. Cen, X. Q. Wang, Y. H. Chen and J. L. Yu, Appl. Phys. Lett. 97, 181904 (2010). CrossRef
  31. M. W. Wu, J. H. Jiang and M. Q. Weng, Phys. Rep. 493, 61 (2010). CrossRef
  32. E. L. Ivchenko and G. E. Pikus, / Superlattices and Other Heterostructures (Springer-Verlag, Berlin, 1995), Chap. 3. CrossRef
  
• 作者单位：Chun-Nan Chen (1)
  Sheng-Hsiung Chang (2)
  Wei-Long Su (3)
  Wan-Tsang Wang (4)
  Hsiu-Fen Kao (4)
  Jen-Yi Jen (1)
  Yiming Li (5)
  
  1. Quantum Engineering Laboratory, Department of Physics, Tamkang University, Tamsui Town, Taipei, 251, Taiwan
  2. Department of Optoelectronic Engineering, Far-East University, Hsin-Shih Town, Tainan, Taiwan
  3. Department of Digital Mulitimedia Technology, Lee-Ming Institute of Technology, Tai-Shan, Taipei, 24305, Taiwan
  4. Department of Physics, National Sun Yat-Sen University, Kaohsiung, 804, Taiwan
  5. Department of Electrical Engineering, National Chiao Tung University, Hsinchu, 300, Taiwan
  
• ISSN：1976-8524

文摘

The bulk inversion asymmetry (Dresselhaus) terms (i.e., B 2, B 1, and B-sub class="a-plus-plus">1 terms) of wurtzite materials are determined. The 2 × 2 conduction band, 2 × 2 heavy-hole band, 2 × 2 light-hole band, and 2 × 2 crystal-field split-off hole band matrices of wurtzite semiconductors are developed and decoupled by using a block diagonal technique. Importantly, those 2 × 2 block diagonal matrices incorporate not only the interband coupling effect but also the bulk inversion asymmetry effect. Analytical expressions for the conduction and the valence band spin-splitting parameters and energies of GaN wurtzite materials are formulated by solving the block diagonal matrices. The presence of these terms is shown to include the spin-splitting phenomenon.