Microstructures and electrical properties of copper oxide doped terbium oxide ceramics
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- 作者：Yingjie Gan (1)
Yu Wang (1)
Xiang Dong (1)
Liang Dong (1) - 刊名：Journal of Materials Science: Materials in Electronics
- 出版年：2014
- 出版时间：September 2014
- 年：2014
- 卷：25
- 期：9
- 页码：4115-4121
- 全文大小：979 KB
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Yu Wang (1)
Xiang Dong (1)
Liang Dong (1)
1. School of Electrical Engineering, Southwest Jiaotong University, Chengdu, 610031, Sichuan, China - ISSN：1573-482X
文摘
The effects of copper oxide (CuO) on the microstructure and electric properties of nonstoichiometric compound terbium dioxide (Tb4O7) ceramics were investigated. Results included a reduction in the sintering temperature to 1,100?°C, a grain size of 4.2?μm, and a density of 96.2?%, which are larger than the values in previous investigation for Tb4O7 ceramics (grain sizes between 0.4 and 1.0?μm). Among the sintered ceramics, the sample doped with 10.0?wt% CuO showed the maximum nonlinear coefficient α?=?43.5, which is obviously greater than α?=?3.03 of the pure sample. Doping with 10.0?wt% CuO also exhibited nonlinearity α?=?2.14 even at 1,123?K. In addition, the impedance spectra of the sample doped with 5.0?mol% CuO showed the largest grain boundary semicircle; 0 and 20?% samples showed both inductive and capacitive reactance.