Approaches for improving the performance of filament-type resistive switching memory
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- 作者：WenTai Lian (1) (2)
ShiBing Long (1)
HangBing Lü (1)
Qi Liu (1) (2)
YingTao Li (1)
Sen Zhang (1)
Yan Wang (1)
ZongLiang Huo (1)
YueHua Dai (2)
JunNing Chen (2)
Ming Liu (1) - 关键词：non ; volatile memory ; resistive random access memory (RRAM) ; conductive filament (CF)
- 刊名：Chinese Science Bulletin
- 出版年：2011
- 出版时间：February 2011
- 年：2011
- 卷：56
- 期：4-5
- 页码：461-464
- 全文大小：551KB
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ShiBing Long (1)
HangBing Lü (1)
Qi Liu (1) (2)
YingTao Li (1)
Sen Zhang (1)
Yan Wang (1)
ZongLiang Huo (1)
YueHua Dai (2)
JunNing Chen (2)
Ming Liu (1)
1. Laboratory of Nano-Fabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China
2. College of Electronics and Technology, Anhui University, Hefei, 230039, China - ISSN：1861-9541
文摘
Resistive random access memory (RRAM) has received significant research interest because of its promising potential in terms of down-scaling, high density, high speed and low power. However, its endurance, retention and uniformity are still imperfect. In this article, the physical mechanisms of filament-type RRAM and the approaches for improving the switching performance, including doping, process optimization and interface engineering, are introduced.