Effect of fluctuation in Al incorporation on the microstructure, bond lengths, and surface properties of an Al x Ga1?em class="a-plus-plus">x N epitaxial layer

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• 作者：Shuchang Wang ; Xiong Zhang ; Hongquan Yang ; Yiping Cui
• 关键词：lattice deformation ; surface properties ; residual strain ; synchrotron X ; ray diffraction
• 刊名：Electronic Materials Letters
• 出版年：2015
• 出版时间：July 2015
• 年：2015
• 卷：11
• 期：4
• 页码：675-681
• 全文大小：1,347 KB
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• 作者单位：Shuchang Wang (1)
  Xiong Zhang (1)
  Hongquan Yang (1)
  Yiping Cui (1)
  
  1. Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing, 210096, China
  
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Condensed Matter Physics
  Electronics, Microelectronics and Instrumentation
  Optical and Electronic Materials
  Thermodynamics
  Characterization and Evaluation of Materials
  
• 出版者：The Korean Institute of Metals and Materials, co-published with Springer Netherlands
• ISSN：2093-6788

文摘

Al x Ga1?em class="EmphasisTypeItalic">x N (0.15 ?x ?0.87) epilayers were grown on sapphire substrates by metal-organic chemical vapor deposition (MOCVD). The lattice deformation, chemical bonding states, and local electronic structure were characterized by a series of techniques, including X-ray diffraction (XRD), Raman scattering, X-ray photoelectron (XPS), and extended Xray absorption fine structure (EXAFS) spectroscopy. The XRD and Raman spectra revealed that substitution of Ga with Al in Al x Ga1?em class="EmphasisTypeItalic">x N epilayers induces a significant contraction in the crystal lattice and a slight expansion of internal parameter u. The XPS measurements indicated the absence of remarkable disorder of the chemical bonds in AlGaN with a high Al content. The EXAFS analysis also demonstrated that the Ga-N and Ga-Al bond lengths are independent of the Al content, whereas the Ga-Ga bond length varies with Al content.