Effect of radio-frequency electric power applied to a boron nitride unbalanced magnetron sputter target on the deposition of cubic boron nitride thin film

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• 作者：Ji-Sun Ko (1) (2)
  Jong-Keuk Park (1)
  Wook-Seong Lee (1)
  Joo-Youl Huh (2)
  Young-Joon Baik (1)
  
• 关键词：cubic boron nitride ; sputtering ; residual stress ; crystal structure ; Fourier transformed infrared spectroscopy
• 刊名：Metals and Materials International
• 出版年：2013
• 出版时间：November 2013
• 年：2013
• 卷：19
• 期：6
• 页码：1317-1321
• 全文大小：
• 作者单位：Ji-Sun Ko (1) (2)
  Jong-Keuk Park (1)
  Wook-Seong Lee (1)
  Joo-Youl Huh (2)
  Young-Joon Baik (1)
  
  1. Electronic Materials Research Center, Korea Institute of Science and Technology, 39-1 Hawolgok-dong, Seongbuk-gu, Seoul, 136-791, Korea
  2. Department of Materials Science and Engineering, Korea University, 145, Anam-ro, Seongbuk-gu, Seoul, 136-701, Korea
  
• ISSN：2005-4149

文摘

Cubic boron nitride (c-BN) films were deposited by an unbalanced magnetron sputtering method. A (100) Si wafer with a nanocrystalline diamond thin film as a surface coating layer or that without it was used as a substrate. The target power was varied from 100 to 400 W. A boron nitride target was used, which was connected to a radio frequency power supply. High frequency power connected to a substrate holder was used for self-biasing. The deposition pressure was 0.27 MPa with a flow of Ar (18 sccm) — N2 (2 sccm) mixed gas. The existence of threshold bias voltages for c-BN formation and resputtering were observed irrespective of target power. The bias voltage window for c-BN formation broadened with increased target power. The deposition rate decreased with enhanced bias voltage and decreased target power. Residual stresses of the films did not vary noticeably with target power within the target power range of c-BN formation. A parameter space for c-BN formation according to the target power and the bias voltage, as two variables, was suggested.