Comparative investigation of InGaP/InGaAs/Ge triple-junction solar cells using different Te-doped InGaP layers in tunnel junctions

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• 作者：Sang Hyun Jung ; Chang Zoo Kim ; Youngjo Kim…
• 关键词：Tellurium ; Tunnel junction ; Pre ; doping ; Conversion efficiency
• 刊名：Journal of the Korean Physical Society
• 出版年：2016
• 出版时间：March 2016
• 年：2016
• 卷：68
• 期：6
• 页码：792-796
• 全文大小：645 KB
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• 作者单位：Sang Hyun Jung (1)
  Chang Zoo Kim (1)
  Youngjo Kim (1)
  Dong Hwan Jun (1)
  Ho Kwan Kang (1)
  Hogyoung Kim (2)
  
  1. Korea Advanced Nano Fab Center, Suwon, 16229, Korea
  2. Department of Visual Optics, Seoul National University of Science and Technology (Seoultech), Seoul, 01811, Korea
  
• 刊物主题：Physics, general; Theoretical, Mathematical and Computational Physics; Particle and Nuclear Physics;
• 出版者：Springer Netherlands
• ISSN：1976-8524

文摘

Heavily tellurium (Te)-doped InGaP layers in tunnel junctions (TJs) grown by using metalorganic chemical vapor deposition (MOCVD) were investigated to improve the device performance of InGaP/InGaAs/Ge triple-junction solar cells. Three different doping techniques were employed to grow the Te-doped InGaP layers in the TJ; Te doping, Te and Si co-doping and Te pre-doping. Compared to other samples, the external quantum efficiency (EQE) profiles in the InGaP top cell were found to be higher for the sample with Te pre-doping. Under a concentrated light condition, higher fill factor (FF) and conversion efficiency were also observed for the sample with Te pre-doping. These indicate that the crystalline qualities of the upper TJ, composed of a p-GaAs/n-InGaP TJ, and the InGaP top cell were improved by using the Te pre-doping method.