High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers

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• 作者：Ya-Ju Lee (9)
  Yung-Chi Yao (9)
  Chun-Ying Huang (10)
  Tai-Yuan Lin (11)
  Li-Lien Cheng (9)
  Ching-Yun Liu (9)
  Mei-Tan Wang (12)
  Jung-Min Hwang (12)
  
  9. Institute of Electro-Optical Science and Technology ; National Taiwan Normal University ; 88 ; Sec. 4 ; Ting-Chou Road ; Taipei ; 116 ; Taiwan
  10. Institute of Electronics Engineering ; National Taiwan University ; 1 ; Sec. 4 ; Roosevelt Road ; Taipei ; 106 ; Taiwan
  11. Institute of Optoelectronic Sciences ; National Taiwan Ocean University ; 2 ; Pei-Ning Road ; Keelung ; 202 ; Taiwan
  12. Solid-State Lighting Systems Department ; Green Energy and Environment Research Laboratories ; Industrial Technology Research Institute (ITRI) ; Hsinchu ; 310 ; Taiwan
  
• 关键词：AlGaN/GaN HEMT ; 2 ; DEG ; Breakdown voltage
• 刊名：Nanoscale Research Letters
• 出版年：2014
• 出版时间：December 2014
• 年：2014
• 卷：9
• 期：1
• 全文大小：1,273 KB
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• 刊物主题：Nanotechnology; Nanotechnology and Microengineering; Nanoscale Science and Technology; Nanochemistry; Molecular Medicine;
• 出版者：Springer US
• ISSN：1556-276X

文摘

In this paper, we numerically study an enhancement of breakdown voltage in AlGaN/GaN high-electron-mobility transistors (HEMTs) by using the AlGaN/GaN/AlGaN quantum-well (QW) electron-blocking layer (EBL) structure. This concept is based on the superior confinement of two-dimensional electron gases (2-DEGs) provided by the QW EBL, resulting in a significant improvement of breakdown voltage and a remarkable suppression of spilling electrons. The electron mobility of 2-DEG is hence enhanced as well. The dependence of thickness and composition of QW EBL on the device breakdown is also evaluated and discussed.