Effect of (Colus-plus">1/3Sblus-plus">2/3) complex doping on the structure and electrical properties of 0.96(Klus-plus">0.49Nalus-plus">0.51)(Nblus-plus">0.97Talus-plus">0.03)Olus-plus">3–0.04Bi
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  • 作者:Zong-Yang Shen ; Wan-Cheng Shen ; Yue-Ming Li…
  • 刊名:Journal of Materials Science: Materials in Electronics
  • 出版年:2017
  • 出版时间:January 2017
  • 年:2017
  • 卷:28
  • 期:1
  • 页码:137-141
  • 全文大小:
  • 刊物类别:Chemistry and Materials Science
  • 刊物主题:Optical and Electronic Materials; Characterization and Evaluation of Materials;
  • 出版者:Springer US
  • ISSN:1573-482X
  • 卷排序:28
文摘
0.96(K0.49Na0.51)(Nb0.97−x(Co1/3Sb2/3)xTa0.03)O3–0.04Bi0.5Na0.5ZrO3 (abbreviated as 0.96KNNT-CSx–0.04BNZ, x = 0.000, 0.002, 0.004, 0.006, 0.008, 0.010) lead-free piezoelectric ceramics were prepared via a solid state reaction method. The effect of (Co1/3Sb2/3) doping amount x on the structure and electrical properties of the ceramics was investigated. The XRD patterns showed the formation of a pure perovskite structure with the coexistence of orthorhombic and tetragonal phases over the whole compositions. However, the vibrational modes slightly shift towards lower frequencies with the increase of x value in the Raman scattering spectra, indicating that the (Co1/3Sb2/3) should be incorporated into the perovskite lattice. The optimal electrical properties obtained in the ceramics with x = 0.008 were as follows: piezoelectric coefficient d33 = 347 pC/N, planar electromechanical coupling coefficient kp = 42.9 %, mechanical quality factor Qm = 47, dielectric permittivity \( \varepsilon_{33}^{T} /\varepsilon_{0} \) = 1435, dielectric loss tanδ = 2.7 %, and Curie temperature Tc = 303 °C.

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