Structural and multiferroic properties of Bilus-plus">0.92−lus-plus">x Holus-plus">0.08Srlus-plus"> lus-plus">x Felus-plus">0.97Mnlus-plus">0.03Olus-plus">3 thin films
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- 作者：Guoqiang Tan ; Wei Yang ; Wei Ye ; Zhongwei Yue ; Huijun Ren…
- 刊名：Journal of Materials Science
- 出版年：2017
- 出版时间：March 2017
- 年：2017
- 卷：52
- 期：5
- 页码：2694-2704
- 全文大小：
- 刊物类别：Chemistry and Materials Science
- 刊物主题：Materials Science, general; Characterization and Evaluation of Materials; Polymer Sciences; Continuum Mechanics and Mechanics of Materials; Crystallography and Scattering Methods; Classical Mechanics;
- 出版者：Springer US
- ISSN：1573-4803
- 卷排序：52
文摘
The Bi0.92−xHo0.08SrxFe0.97Mn0.03O3(BHSrxFMO) thin films were deposited on FTO/glass substrates by the sol–gel method. The structure, surface morphologies, and electric properties of the thin films were investigated. The results show that the structure of BHSrxFMO thin films transformed from rhombohedral R3c:H to rhombohedral R3m:R when doped with the Sr2+ ions. When the ferroelectric domain structure of the BHSrxFMO(x = 0.00–0.04) thin films is converted from ferroelectric phase and antiferroelectric phase to ferroelectric phase, the coercive field (Ec) increased. This change occurs when the defect dipole of \( ({\text{Sr}}_{{_{{\text{Bi}}} }}^{{\prime }} - {\text{V}}_{{\text{O}}}^{ \cdot \cdot } )^{ \cdot } \) of BHSrxFMO thin films increased, which clamps the domain wall motion and changes the directions of spontaneous polarization. In an electric field of 536 kV/cm, the 2Pr and 2Ec of BHSr3FMO thin film are 81.9 μC/cm2 and 524 kV/cm, respectively. In the magnetic field of 8000 Oe, the magnetization of the BHSr3FMO thin film is 8.34 emu/cm3. The BHSr3FMO thin film shows the great multiferroic properties, which are mainly connected with the rhombohedral structure of R3c:H (51%)/R3m:R(49%) space groups at morphotropic phase boundary.