文摘
In/Si(111) superstructures formed by the deposition of indium on a ? × ?-In surface at room temperature were investigated by using a scanning tunneling microscope (STM). The 2×2, ‘striped- hexagonal ? × ? (? × ?-hex), and rectangular ? × ? (? × ?-rec) structures were identified. We demonstrated that the ‘striped-and the ? × ?-hex structures were falsely identified as ? × ?-hex and ? × ?-rec in a previous report [A. A. Saranin et al., Phys. Rev. B 74, 035436 (2006)]. As in the ? × ?-hex and ? × ?-rec structures, a ? × ? periodicity was observed in the resolved STM features of the ‘striped-structure. These three ? × ? structures formed at room temperature were shown to be identical to the corresponding In-induced phases formed at high temperature. The apparent height difference between the ‘striped-and the ? × ?-hex structures in the topographic STM image suggests that the ? × ?-hex structure consists of double l√ayers of In. This possibility contrasts with recent theoretical predictions of single-layer In for the ? × ?-hex structure. Keywords Scanning tunneling microscopy In/Si(111) Room-temperature deposition ? × ?