Investigation on the Properties of Nonpolar m-Plane GaN-Based Light-Emitting Diode Wafers Grown on LiGaO2(100) Substrates

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• 作者：Weijia Yang ; Wenliang Wang ; Yunhao Lin ; Zuolian Liu…
• 关键词：Nonpolar ; m ; plane GaN ; LiGaO2(100) substrates ; properties ; high ; efficiency LEDs
• 刊名：Journal of Electronic Materials
• 出版年：2015
• 出版时间：August 2015
• 年：2015
• 卷：44
• 期：8
• 页码：2670-2678
• 全文大小：1,068 KB
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  44.H.D
• 作者单位：Weijia Yang (1)
  Wenliang Wang (1)
  Yunhao Lin (1)
  Zuolian Liu (1)
  Shizhong Zhou (1)
  Huirong Qian (1)
  Guoqiang Li (1) (2)
  
  1. State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, China
  2. Department of Electronic Materials, School of Materials Science and Engineering, South China University of Technology, Guangzhou, 510640, China
  
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Chemistry
  Optical and Electronic Materials
  Characterization and Evaluation Materials
  Electronics, Microelectronics and Instrumentation
  Solid State Physics and Spectroscopy
  
• 出版者：Springer Boston
• ISSN：1543-186X

文摘

High-quality nonpolar m-plane GaN-based light-emitting diode (LED) wafers on LiGaO2(100) substrates have been grown in this work by the combination of pulsed laser deposition and molecular beam epitaxy technologies. This work systemically studies the crystalline quality, surface morphology, as well as optoelectronic properties of as-grown nonpolar m-plane GaN-based LED wafers. The as-grown nonpolar m-plane GaN-based LED wafers on LiGaO2(100) substrates show good structural properties with estimated dislocation density ?08 cm? and abrupt InGaN/GaN interfaces. A photoluminescence peak at approximately 446?nm with full-width at half-maximum (FWHM) of 21.2?nm is identified at room temperature. A strong electroluminescence (EL) peak observed at 446?nm with FWHM of 20.7?nm is obtained at an injection current of 20?mA. Furthermore, there is a slight blue shift in the EL emission wavelength with increase in the injection current, while the EL FWHM can be kept stable thanks to the absence of the quantum confined Stark effect. This study of high-quality nonpolar m-plane GaN-based LEDs is of paramount importance for future application of high-efficiency GaN-based devices.