Vertically aligned silicon nanowires with rough surface and its NO2 sensing properties
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- 作者：Yuxiang Qin ; Yongyao Wang ; Yi Liu
- 刊名：Journal of Materials Science: Materials in Electronics
- 出版年：2016
- 出版时间：November 2016
- 年：2016
- 卷：27
- 期：11
- 页码：11319-11324
- 全文大小：1,271 KB
- 刊物类别：Chemistry and Materials Science
- 刊物主题：Chemistry
Optical and Electronic Materials
Characterization and Evaluation Materials - 出版者：Springer New York
- ISSN：1573-482X
- 卷排序：27
文摘
Vertically aligned array of silicon nanowires (SiNWs) with rough surface was demonstrated to be a promising material for high performance gas sensor applications. A two-step etching process, i.e. metal-induced chemical etching followed by the back-etching of KOH was developed to prepare the rough SiNWs array. The roughness of SiNWs effectively increases the active surface area as evidence that the measured BET specific area is ten times larger than that of the smooth nanowires without KOH etching. Meanwhile, the nanowire diameter and distribution density are also decrease due to KOH etching. The high active surface area and loose configuration of the rough SiNWs array are favorable for gas adsorption and rapid gas diffusion. As a result, the sensor based on the rough SiNWs array exhibits high response, good stability and satisfying response–recovery characteristics in detection of NO2 in ppb–ppm level at room temperature.