Monte Carlo simulation based on Geant4 of single event upset induced by heavy ions
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- 作者：Chao Geng (15101) (25101)
Jie Liu (15101)
ZhanGang Zhang (15101) (25101)
MingDong Hou (15101)
YouMei Sun (15101)
Kai Xi (15101) (25101)
Song Gu (15101) (25101)
JingLai Duan (15101)
HuiJun Yao (15101)
Dan Mo (15101)
Jie Luo (15101) - 关键词：SEU occurrence ; sensitive volume ; critical charge ; deposited energy ; MUFPSA
- 刊名：SCIENCE CHINA Physics, Mechanics & Astronomy
- 出版年：2013
- 出版时间：June 2013
- 年：2013
- 卷：56
- 期：6
- 页码：1120-1125
- 全文大小：655KB
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Jie Liu (15101)
ZhanGang Zhang (15101) (25101)
MingDong Hou (15101)
YouMei Sun (15101)
Kai Xi (15101) (25101)
Song Gu (15101) (25101)
JingLai Duan (15101)
HuiJun Yao (15101)
Dan Mo (15101)
Jie Luo (15101)
15101. Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou, 730000, China
25101. University of Chinese Academy of Sciences, Beijing, 100190, China - ISSN：1869-1927
文摘
The present work is a computational simulation of single event upset (SEU) induced by heavy ions passing through the device with Geant4-tool based on Monte Carlo transport code. Key parameters affecting SEU occurrence are examined, and related geometrical construction and critical charge are quantified. The MUlti-Functional Package for SEU Analysis (MUFPSA) has been successfully programmed and applied for SEU occurrence after the completion of device geometrical construction, critical charge, and SEU cross section calculation. The proposed MUFPSA has yielded a good agreement with MRED. Specifically, the results show that higher LET incident ions lead to increased SEU vulnerability due to more diffusion and higher energy deposition. In addition, the analytical method of radial ionization profile provides a good complementary interpretation.