Integrated D-band transmitter and receiver for wireless data communication in 65?nm CMOS

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• 作者：Zhiwei Xu ; Qun Jane Gu ; Yi-Cheng Wu…
• 关键词：Injection locking buffer ; Low noise amplifier (LNA) ; Non ; coherent modulation ; On–off key ; Power amplifier (PA) ; Mm ; wave circuits ; Voltage controlled oscillator (VCO)
• 刊名：Analog Integrated Circuits and Signal Processing
• 出版年：2015
• 出版时间：January 2015
• 年：2015
• 卷：82
• 期：1
• 页码：171-179
• 全文大小：1,062 KB
• 参考文献：1. Afshar, B. et al. (2008). A robust 24?mW 60?GHz receiver in 90?nm standard CMOS. In: ISSCC.
  2. Radisic, V., et al. (2008). Demonstration of 184 and 255-GHz amplifiers using InP HBT Technology. / IEEE Microwave and Wireless Components Letters, / 18(4), 281-83. CrossRef
  3. Gianesello, F., & Gloria, D. et al. (2006). 65?nm RFCMOS technologies with bulk and HR SOI substrate for millimeter wave passives and circuits characterized up to 220?GHz, / International Microwave Symposium. pp. 1927-930.
  4. Seo, M., Jagannathan, B., Carta, C., Pekarik, J., Chen, L., Yue, C. P., & Rodwell, M. (2009). A 1.1?V 150?GHz amplifier with 8?dB gain and +6 dBm saturated output power in standard digital 65?nm CMOS using dummy-prefilled microstrip lines, / ISSCC Digest of Technical Papers, pp. 484-85.
  5. Nicolson, S. T et al. (2008) A 1.2?V, 140?GHz receiver with on-die antenna in 65?nm CMOS, / IEEE RFIC Symposium, pp. 229-32.
  6. Sarkas, I. et al. (2010) Second generation transceivers for D-band radar and data communication applications, / IEEE International Microwave Symposium Digest, pp. 1328-331.
  7. Heydari, B. et al. (2007) Low-power mm-Wave components up to 104?GHz in 90?nm CMOS, / ISSCC Digest of Technical Papers, pp. 200-01.
  8. Xu, Z. et al. (2010) D-Band CMOS Transmitter and Receiver for Multi-Giga-Bit/sec Wireless Data Link, / IEEE Custom Integrated Circuits Conference (CICC), pp. 1-.
  9. Kang, K., et al. (2010). A 60?GHz OOK receiver with an on-chip antenna in 90?nm CMOS / , IEEE Journal of / Solid- / State Circuits, / 45: 1720-731.
  10. Xu, Z., Gu, Q. J., & Chang, M.-C. F. (2011). A Three Stage, Fully Differential 128-57?GHz CMOS Amplifier with Wide Band Matching. / IEEE Microwave and Wireless Components Letters, / 21(10), 550-52. CrossRef
  
• 作者单位：Zhiwei Xu (1)
  Qun Jane Gu (2)
  Yi-Cheng Wu (3)
  Mau-Chung Frank Chang (3)
  
  1. HRL Laboratories LLC, Malibu, CA, 90265, USA
  2. Electrical and Computer Engineering Department, University of California, Davis, CA, 95616, USA
  3. Electrical Engineering Department, University of California, Los Angeles, CA, 90095, USA
  
• 刊物类别：Engineering
• 刊物主题：Circuits and Systems
  Electronic and Computer Engineering
  Signal,Image and Speech Processing
  
• 出版者：Springer Netherlands
• ISSN：1573-1979

文摘

A 140?GHz transmitter (Tx) and receiver (Rx) chip set has been developed in 65?nm CMOS by using on–off keying non-coherent modulation to support high speed proximity data communication. To the author’s best knowledge, it enables the first integrated multi-Gbps data link in D-band by saving power hungry frequency synthesizer, high speed data convertors and complicated digital signal processor. The Tx and Rx occupy 0.03 and 0.12?mm2 chip areas, respectively. To validate the communication at 140?GHz carrier frequency, a data link has been built to demonstrate up to 2.5 Gbps data rate with power consumption of 115/120 mW for Tx/Rx respectively.