On the local injection of emitted electrons into micrograins on the surface of AIII–BV semiconductors

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• 作者：N. D. Zhukov ; E. G. Glukhovskoi ; A. A. Khazanov
• 刊名：Semiconductors
• 出版年：2016
• 出版时间：June 2016
• 年：2016
• 卷：50
• 期：6
• 页码：756-760
• 全文大小：252 KB
• 刊物类别：Physics and Astronomy
• 刊物主题：Physics
  Magnetism and Magnetic Materials
  Electromagnetism, Optics and Lasers
  Russian Library of Science
  
• 出版者：MAIK Nauka/Interperiodica distributed exclusively by Springer Science+Business Media LLC.
• ISSN：1090-6479
• 卷排序：50

文摘

The characteristics of the injection of electrons into a semiconductor from a microprobe–micrograin nanogap are investigated with a tunneling microscope in the mode of field emission into locally selected surface microcrystals of indium antimonide, indium arsenide, and gallium arsenide. The current mechanisms are established and their parameters are determined by comparing the experimental I–ass="EmphasisTypeItalic ">V characteristics and those calculated from formulas of current transport. The effect of limitation of the current into the micrograins of indium antimonide and indium arsenide which manifests itself at injection levels exceeding a certain critical value, e.g., 6 × 1016 cm–3 for indium antimonide and 4 × 1017 cm–3 for indium arsenide, is discovered. A physical model, i.e., the localization of electrons in the surface area of a micrograin due to their Coulomb interaction, is proposed.Original Russian Text © N.D. Zhukov, E.G. Glukhovskoi, A.A. Khazanov, 2016, published in Fizika i Tekhnika Poluprovodnikov, 2016, Vol. 50, No. 6, pp. 772–776.