The effect of microstructure on the laser-induced transverse voltage in Pb-doped Bi2Sr2Co2O y thin films on tilted substrates

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• 作者：Guoying Yan (1)
  Shufang Wang (1)
  Shanshan Chen (1)
  Fuqiang Liu (1)
  Zilong Bai (1)
  Jianglong Wang (1)
  Wei Yu (1)
  Guangsheng Fu (1)
  
• 刊名：Applied Physics A: Materials Science & Processing
• 出版年：2013
• 出版时间：June 2013
• 年：2013
• 卷：111
• 期：4
• 页码：1203-1206
• 全文大小：436KB
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• 作者单位：Guoying Yan (1)
  Shufang Wang (1)
  Shanshan Chen (1)
  Fuqiang Liu (1)
  Zilong Bai (1)
  Jianglong Wang (1)
  Wei Yu (1)
  Guangsheng Fu (1)
  
  1. Hebei Key Lab of Optic-Electronic Information and Materials, Hebei University, 071002, Baoding, P.R. China
  
• ISSN：1432-0630

文摘

Pb-doped Bi2Sr2Co2O y thin films were prepared on tilted LaAlO3(001) by using the chemical solution deposition technique under different annealing temperatures and its laser-induced transverse voltage effect was investigated by using a 308 nm pulsed radiation. The shape of the laser-induced voltages in these films depended strongly on the film microstructure. Films with a larger grain size and better crystalline quality had a voltage signal with greater amplitude and faster response time. The experimental results can be explained by a mechanism involving the transverse thermoelectric effect as well as the transport theory of thermoelectric materials.