Mg x Zn1?em class="a-plus-plus">x O Thin-Film Transistor-Based UV Photodetector with Enhanced Photoresponse
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- 作者：Chieh-Jen Ku ; Pavel Reyes ; Ziqing Duan ; Wen-Chiang Hong…
- 关键词：MgZnO ; ZnO ; thin ; film transistors ; UV photodetectors
- 刊名：Journal of Electronic Materials
- 出版年：2015
- 出版时间：October 2015
- 年：2015
- 卷：44
- 期：10
- 页码：3471-3476
- 全文大小：2,804 KB
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Pavel Reyes (1)
Ziqing Duan (1)
Wen-Chiang Hong (1)
Rui Li (1)
Yicheng Lu (1)
1. Department of Electrical and Computer Engineering, Rutgers University, 94 Brett Road, Piscataway, NJ, 08854, USA - 刊物类别：Chemistry and Materials Science
- 刊物主题：Chemistry
Optical and Electronic Materials
Characterization and Evaluation Materials
Electronics, Microelectronics and Instrumentation
Solid State Physics and Spectroscopy - 出版者：Springer Boston
- ISSN：1543-186X
文摘
ZnO and its ternary alloy Mg x Zn1?em class="EmphasisTypeItalic ">x O (MZO) are promising wide-band-gap semiconductor materials well-suited to UV detection. The Mg content of MZO facilitates energy band gap engineering, enabling fabrication of UV photodetectors that can operate in the deep-UV region. Different types of UV photodetector based on ZnO have been reported, including photoconductive, Schottky, and transistor types. Transistor-based photodetectors have the advantage of being three-terminal devices, thus enabling biasing control and implementation in addressable arrays. In this paper we report an MZO thin-film-transistor (TFT)-based UV photodetector. The device has a low dark current (2 × 10?4 A) and an ON/OFF ratio of 1011. We show that by using a small amount of Mg (5%) in the MZO TFT we can substantially improve the photoresponse recovery time of the photodetector to 15 ms compared with 42 ms for a similar TFT with 0% Mg. We also observed a shift in the cutoff wavelength from 377.21 nm for the 0% Mg TFT photodetector down to 370.96 nm for the MZO TFT photodetector. We attribute the enhanced recovery time improvement of the MZO TFT UV photodetector to suppression of oxygen vacancies as a result of incorporation of the Mg in the MZO. Keywords MgZnO ZnO thin-film transistors UV photodetectors